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"lin kun lin"的相关文件
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| 國立交通大學 |
2020-02-02T23:54:41Z |
Interfacial reactions between Ti and Y2O3/Ca4Ti3O10 composites
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Lu, Ming-Wei; Lin, Kun-Lin; Lin, Chien-Cheng |
| 國立交通大學 |
2019-12-13T01:12:21Z |
Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant
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Hsu, Wen-Yang; Lian, Yuan-Chi; Wu, Pei-Yu; Yong, Wei-Min; Sheu, Jinn-Kong; Lin, Kun-Lin; Wu, YewChung Sermon |
| 國立交通大學 |
2019-09-02T07:46:17Z |
Reactions between Si melt and various ceramics
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Lin, Che-Yu; Lin, Kun-Lin; Lin, Chien-Cheng |
| 國立交通大學 |
2019-05-02T00:25:56Z |
Investigation of the interactions between titanium and calcium zirconium oxide (CaZrO3) ceramics modified with alumina
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Lu, Ming-Wei; Lin, Kun-Lin; Lin, Chien-Cheng |
| 國立交通大學 |
2019-04-03T06:44:26Z |
High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
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Wu, Tsung-Ta; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Hung-Chun; Hsieh, Tung-Ying; Lin, Wei-Sheng; Kao, Ming-Hsuan; Chen, Chiu-Hao; Yao, Jie-Yi; Jian, Yi-Ling; Hsu, Chiung-Chih; Lin, Kun-Lin; Shen, Chang-Hong; Chueh, Yu-Lun; Shieh, Jia-Min |
| 國立交通大學 |
2019-04-02T06:01:00Z |
Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant
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Hsu, Wen-Yang; Lian, Yuan-Chi; Wu, Pei-Yu; Yong, Wei-Min; Sheu, Jinn-Kong; Lin, Kun-Lin; Wu, YewChung Sermon |
| 國立交通大學 |
2018-08-21T05:54:29Z |
Growth of GaN on {12(3)over-bar5}-like Facets of Patterned Sapphire Substrate
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Wu, Pei-Yu; Chen, Chien-Chih; Huang, Chia-Yen; Kuo, Hao-Chung; Lin, Kun-Lin; Wu, YewChung Sermon |
| 國立交通大學 |
2018-08-21T05:54:01Z |
Effects of partial pressure of oxygen on sintering of a ZrO2-30 mol% Ti powder mixture
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Lin, Kun-Lin; Lin, Chien-Cheng |
| 國立交通大學 |
2018-08-21T05:53:26Z |
Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing
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Hsu, Chung-Chun; Lin, Kun-Lin; Chi, Wei-Chun; Chou, Chen-Han; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
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Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
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