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Showing items 91-104 of 104  (5 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2001-05 Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2001-03 Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor Pan, Hsi-Jen; Feng, Shun-Ching; Wang, Wei-Chou; Lin, Kun-Wei; Yu, Kuo-Hui; Wu, Cheng-Zu; Laih, Lih-Wen; Liu, Wen-Chau
國立成功大學 2001-02 Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Lour, Wen-Shiung; Liu, Wen-Chau
國立成功大學 2001-02 Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs) Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Wu, Cheng-Zu; Liu, Wen-Chau; Laih, Lin-Wen; Cheng, Shiou-Ying
國立成功大學 2001-02 Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures Wang, Wei-Chou; Pan, Hsi-Jen; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2001-01 Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chang, Wen-Lung; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2000-12 Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Chin-Chuan; Yu, Kuo-Hui; Lin, Kun-Wei; Wu, Cheng-Zu; Liu, Wen-Chau
國立成功大學 2000-11 Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors Yen, Chih-Hung; Lin, Kuan-Po; Yu, Kuo-Hui; Chang, Wen-Lung; Lin, Kun-Wei; Liu, Wen-Chau
國立成功大學 2000-11 Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan
國立成功大學 2000-10-26 InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu; Liu, Wen-Chau
國立成功大學 2000-09 Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Laih, Lih-Wen; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2000-08 Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications Liu, Wen-Chau; Wang, Wei-Chou; Pan, Hsi-Jen; Chen, Jing-Yuh; Cheng, Shiou-Ying; Lin, Kun-Wei; Yu, Kuo-Hui; Thei, Kong-Beng; Cheng, Chin-Chuan
國立成功大學 2000-06 Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure Lin, Kuan-Po; Yen, Chih-Hung; Chang, Wen-Lung; Yu, Kuo-Hui; Lin, Kun-Wei; Liu, Wen-Chau
國立成功大學 2000-01 High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau

Showing items 91-104 of 104  (5 Page(s) Totally)
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