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Taiwan Academic Institutional Repository >
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"lin kun wei"
Showing items 66-90 of 104 (5 Page(s) Totally)
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| 國立成功大學 |
2003-11 |
Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
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Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2003-09-01 |
Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode
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Lin, Kun-Wei; Chen, Huey-Ing; Cheng, Chin-Chuan; Chuang, Hung-Ming; Lu, Chun-Tsen; Liu, Wen-Chau |
| 國立成功大學 |
2003-07 |
A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor
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Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Tsai, Yan-Ying; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2003-06-14 |
砷化鎵系列肖特基接觸式氫氣感測元件之研究
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林坤緯; Lin, Kun-Wei |
| 國立成功大學 |
2003-06 |
A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor
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Lu, Chun-Tsen; Lin, Kun-Wei; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2003 |
InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor
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Chuang, Hung-Ming; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-11 |
A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor
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Liu, Wen-Chau; Lin, Kun-Wei; Chen, Huey-Ing; Wang, Chih-Kai; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Lu, Chun-Tsen |
| 國立成功大學 |
2002-10 |
Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)
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Yu, Kuo-Hui; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Shiou-Ying; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-05 |
Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
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Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Wang, Ckih-Kai; Liu, Wen-Chau |
| 國立成功大學 |
2002-03 |
On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure
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Thei, Kong-Beng; Chuang, Hung-Ming; Yu, Kuo-Hui; Liu, Wen-Chau; Liu, Rong-Chau; Lin, Kun-Wei; Su, Chi-Wen; Ho, Chin-Shiung; Wuu, Shou-Gwo; Wang, Chung-Shu |
| 國立成功大學 |
2002-01-17 |
Highly hydrogen-sensitive Pd/InP metaloxide-semiconductor Schottky diode hydrogen sensor
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Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Thei, Kong-Beng; Liu, Wen-Chau; Chen, Huey-Ing |
| 國立成功大學 |
2001-12 |
Investigation of temperature-dependent characteristics of an n(+)-InGaAs/n-GaAs composite doped channel HFET
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Thei, Kong-Beng |
| 國立成功大學 |
2001-12 |
A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor
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Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Yu, Kuo-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Chen, Jing-Yuh; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations
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Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Wang, Chih-Kai; Chiou, Wen-Huei; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors
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Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Shiou-Ying; Cheng, Chin-Chuan; Chen, Jing-Yuh; Wu, Cheng-Zu; Liu, Wen-Chou |
| 國立成功大學 |
2001-11 |
Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes
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Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Wang, Chik-Kai |
| 國立成功大學 |
2001-09 |
Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor
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Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Cheng, Shiou-Ying; Yu, Kuo-Hui |
| 國立成功大學 |
2001-08-13 |
Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu |
| 國立成功大學 |
2001-08 |
High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (delta-PHEMT's)
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Liu, Wen-Chau; Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Wang, C. K.; Chang, Hong-Ming |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Wang, C. K.; Chuang, Hung-Ming |
| 國立成功大學 |
2001-08 |
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Wu, Cheng-Zu; Lin, Kuan-Po; Yen, Chih-Hung |
| 國立成功大學 |
2001-08 |
A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications
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Thei, Kong-Beng; Liu, Wen-Chau; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Chin-Chuan; Ho, Chin-Hsiung; Su, Chi-Wen; Wuu, Shou-Gwo; Wang, Chung-Shu |
| 國立成功大學 |
2001-07 |
Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs pseudomorphic high electron mobility transistor
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying |
| 國立成功大學 |
2001-07 |
Characterization of polysilicon resistors in sub-0.25 mu m CMOS ULSI applications
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Liu, Wen-Chau; Thei, Kong-Beng; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Chin-Chuan; Ho, Yen-Shih; Su, Chi-Wen; Wong, Shyh-Chyi; Lin, Chih-Hsien; Diaz, C. H. |
| 國立成功大學 |
2001-06 |
On the multiple negative-differential-resistance (MNDR) InGaP/GaAs resonant tunneling bipolar transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Feng, Shun-Ching; Lin, Kun-Wei; Yu, Kuo-Hui; Laih, Lih-Wen |
Showing items 66-90 of 104 (5 Page(s) Totally)
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