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"lin wen yan"
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| 國立成功大學 |
2021-05-31 |
台灣航太產業經營績效與工業合作、研發資源補助之關聯性分析
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林文彥; Lin, Wen-Yan |
| 國立成功大學 |
2019-07-19 |
低電壓五苯電晶體於不同氣氛下的電特性與記憶效應研究
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林文彥; Lin, Wen-Yan |
| 國立成功大學 |
2019-07-19 |
低電壓五苯電晶體於不同氣氛下的電特性與記憶效應研究
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林文彥; Lin, Wen-Yan |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
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Wu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:10Z |
Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Lin, Wen-Yan; Chen, Min-Chen; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:48:22Z |
Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress
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Lee, Yao-Jen; Fan, Chia-Hao; Yang, Wen-Luh; Lin, Wen-Yan; Huang, Bohr-Ran; Chao, Tien-Sheng; Chuu, D. S. |
| 國立成功大學 |
2016-09-26 |
Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Lin, Wen-Yan; Chen, Min-Chen; Sze, Simon M. |
| 高雄醫學大學 |
2001 |
一維及二維空間共軛有機分子的非線性吸收光學
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林汶彥; Lin, Wen-Yan |
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