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"lin y h"的相關文件
顯示項目 1981-2005 / 2819 (共113頁)
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每頁顯示[10|25|50]項目
| 國立成功大學 |
2020 |
Analysis and Prediction of Overloaded Extra-Heavy Vehicles for Highway Safety Using Machine Learning
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Lin, Y.-H.;Gu, S.;Wu, Wu W.-S.;Wang, R.;Wu, F. |
| 國立成功大學 |
2020 |
Fluorescence Signal-to-Noise Ratio Enhanced by Off-Plane Excitation for Quantitative PCR Device
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Chao, L.-C.;Tsai, H.-Y.;Li, C.-R.;Huang, K.-C.;Lin, Y.-H.;Shieh, D.-B. |
| 國立成功大學 |
2020 |
COVID-19-related information sources and psychological well-being: An online survey study in Taiwan
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Ko, N.-Y.;Lu, W.-H.;Chen, Y.-L.;Li, D.-J.;Wang, P.-W.;Hsu, S.-T.;Chen, Chen C.-C.;Lin, Y.-H.;Chang, Y.-P.;Yen, C.-F. |
| 國立成功大學 |
2020 |
Dysregulated FAM215A Stimulates LAMP2 Expression to Confer Drug-Resistant and Malignant in Human Liver Cancer
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Huang, P.-S.;Lin, Y.-H.;Chi, H.-C.;Tseng, Y.-H.;Chen, Chen C.Y.;Lin, T.-K.;Yeh, C.-T.;Lin, K.-H. |
| 國立成功大學 |
2020 |
Exposure to ZnO/TiO2 nanoparticles affects health outcomes in cosmetics salesclerks
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Lee, C.-C.;Lin, Y.-H.;Hou, W.-C.;Li, M.-H.;Chang, J.-W. |
| 國立成功大學 |
2020 |
Discoidin domain receptor 1 regulates runx2 during osteogenesis of osteoblasts and promotes bone ossification via phosphorylation of p38
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Chou, L.-Y.;Chen, Chen C.-H.;Chuang, S.-C.;Cheng, T.-L.;Lin, Y.-H.;Chou, H.-C.;Fu, Y.-C.;Wang, Y.-H.;Wang, C.-Z. |
| 國立成功大學 |
2020 |
The highest fluorescence signal-to-noise ratio is achieved by optimizing the light acquisition direction and tube diameter of the QPCR system
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Ma, C.-L.;Tsai, H.-Y.;Shieh, D.-B.;Huang, K.-C.;Yang, C.-C.;Lin, Y.-H. |
| 國立成功大學 |
2020 |
Modifying the Windings of HFCT Restrain Magnetic Saturation and Harmonics Interference
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Chen, J.-F.;Hsu, Y.-J.;Lin, Y.-H. |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Single-Crystal Y 2 O 3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition
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Lin, Y.H.;Cheng, C.K.;Chen, K.H.;Fu, C.H.;Chang, T.W.;Hsu, C.H.;Kwo, J.;Hong, M.; Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Single-crystal atomic layer deposited Y<inf>2</inf>O<inf>3</inf> on GaAs(0 0 1) - Growth, structural, and electrical characterization
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Wu, S.Y.;Chen, K.H.;Lin, Y.H.;Cheng, C.K.;Hsu, C.H.;Kwo, J.;Hong, M.; Wu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Epitaxial ferromagnetic Fe<inf>3</inf>Si on GaAs(111)A with atomically smooth surface and interface
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Liu, Y.C.;Chen, Y.W.;Tseng, S.C.;Chang, M.T.;Lo, S.C.;Lin, Y.H.;Cheng, C.K.;Hung, H.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Liu, Y.C.; Chen, Y.W.; Tseng, S.C.; Chang, M.T.; Lo, S.C.; Lin, Y.H.; Cheng, C.K.; Hung, H.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process
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Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures
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Pi, T.W.;Lin, Y.H.;Fanchiang, Y.T.;Chiang, T.H.;Wei, C.H.;Lin, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y 2 O 3 /n-GaAs(001)
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Lin, Y.-H.;Fu, C.-H.;Lin, K.-Y.;Chen, K.-H.;Chang, T.-W.;Raynien Kwo, J.;Hong, M.; Lin, Y.-H.; Fu, C.-H.; Lin, K.-Y.; Chen, K.-H.; Chang, T.-W.; Raynien Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Demonstration of large field effect in topological insulator films via a high-庥 back gate
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Wang, C.Y.;Lin, H.Y.;Yang, S.R.;Chen, K.H.M.;Lin, Y.H.;Chen, K.H.;Young, L.B.;Cheng, C.K.;Fanchiang, Y.T.;Tseng, S.C.;Hong, M.;Kwo, J.; Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
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Cheng, C.K.;Young, L.B.;Lin, K.Y.;Lin, Y.H.;Wan, H.W.;Lu, G.J.;Chang, M.T.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
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Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study
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Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Surface electronic structure of epi germanium (001)-2 ? 1
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Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
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Chang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
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Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y 2 O 3 /Al 2 O 3 on GaAs(001)
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Lin, K.Y.;Young, L.B.;Cheng, C.K.;Chen, K.H.;Lin, Y.H.;Wan, H.W.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Kwo, J.;Hong, M.; Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
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Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
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Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG |
顯示項目 1981-2005 / 2819 (共113頁)
<< < 75 76 77 78 79 80 81 82 83 84 > >>
每頁顯示[10|25|50]項目
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