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"lin y h g"
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| 臺大學術典藏 |
2022-03-22T15:05:12Z |
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3as a gate dielectric
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Young, L. B.; Liu, J.; Lin, Y. H.G.; Wan, H. W.; Chiang, L. S.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2021-07-21T23:21:09Z |
In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures
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Lin, Y. H.G.; Wan, H. W.; Young, L. B.; Liu, J.; Cheng, Y. T.; Lin, K. Y.; Hong, Y. J.; Wu, C. T.; Kwo, J.; Hong, M. |
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