臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 796-805 of 912 (92 Page(s) Totally)
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Institution	Date	Title	Author
國立東華大學	2006	Effect of temperature on novel InAlGaP/GaAs/InGaAs camel-gate pseudomorphic high-electron mobility transistors	Lin,Y. S.; Hsieh,Y. L.
國立東華大學	2006	n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors	Lin,Y. S.; Huang,D. H.; Wu,Y. H.; Hsu,R. T.; Wang,T. B.; Hsu,W. C.
國立東華大學	2006	Improved InAlGaP-based heterostructure field-effect transistors	Lin,Y. S.; Huang,D. H.; Ho,C. H.; Huang,J. C.; Su,K. H.; Wang,T. B.; Hsu,W. C.
國立東華大學	2006	Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistor using emitter edge-thinning	Lin,Y. S.; Huang,D. H.; Wang,T. B.; Su,K. H.; Hsu,W. C.
國立東華大學	2006	Thermoreflectance characterization of interband transitions of an In0.34Al0.66As0.85Sb0.15 film expitaxy on InP	Lin,Y. S.; Ho,C. H.; Li,J. H.
國立東華大學	2006	Photoreflectance and Photoluminescence Study of InxGa1-xAs/GaAs Graded-Channel High Electron Mobility Transistors	Lin,Y. S.; Ho,C. H.; Huang,K. W.
國立東華大學	2006	Performance improvement in tensile-strained In0.5Al0.5As/InXGa1-XAs/ In0.5Al0.5As metamorphic HEMT	Lin,Y. S.; Chen,Y. J.; Wu,C. L.; Huang,J. C.
國立東華大學	2006	Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron- mobility transistors with a symmetrically graded 3 and an inversely graded channel	Lin,Y. S.; WuY. H.; Liao,Y. K.; Huang,J. C.; Hsu,R. T.; Huang,D. H.; Hsu,W. C.
國立東華大學	2006	The dual-specific binding of dengue virus and target cells for the antibody-dependent enhancement of dengue virus infection.	Huang, K. J.; Yang, Y. C.; Lin, Y. S.; Huang, J. H.; Liu, H. S.; Yeh, T. M.; Chen, S. H.; Liu, C. C.; Lei, H. Y.
國立東華大學	2006	A Highly Active Ionic Liquid Catalyst for Morita-Baylis-Hillman Reaction	Lin, Y. -S.; C. -Y. Lin; C. -W. Liu ;Thomas Y. R. Tsai

Showing items 796-805 of 912 (92 Page(s) Totally)
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