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Institution Date Title Author
國立交通大學 2017-04-21T06:55:49Z Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi
國立交通大學 2017-04-21T06:55:33Z Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx Chung, Chen-Chen; Lo, Hsiao-Chieh; Lin, Yen-Ku; Yu, Hung-Wei; Binh Tinh Tran; Lin, Kung-Liang; Chen, Yung Chang; Nguyen-Hong Quan; Chang, Edward Yi; Tseng, Yuan-Chieh
國立交通大學 2017-04-21T06:55:20Z Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Liu, Shih-Chien; Lin, Yen-Ku; Sze, Simon M.; Chang, Edward Yi
國立交通大學 2017-04-21T06:48:49Z Enhancement-mode AlGaN/GaN MIS-HEMTs with Low Threshold Voltage Hysteresis Using Damage-free Neutral Beam Etched Gate Recess Lin, Yen-Ku; Noda, Shuichi; Lee, Ruey-Bor; Huang, Chia-Ching; Quang Ho Luc; Samukawa, Seiji; Chang, Edward Yi

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