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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"lin yo sheng"的相关文件
显示项目 31-40 / 59 (共6页)
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| 國立臺灣大學 |
2005 |
An Analysis of Base Bias Current Effect on SiGe HBT
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2005 |
The determination of S-parameters from the poles of voltage-gain transfer function for RF IC design
|
Lu, Shey-Shi; Lin, Yo-Sheng; Chiu, Hung-Wei; Chen, Yu-Chang; Meng, Chin-Chun |
| 國立臺灣大學 |
2005 |
Temperature-dependence of noise figure of monolithic RF transformers on a thin (20 μm) silicon substrate
|
Lin, Yo-Sheng; Liang, Hsiao-Bin; Wang, Tao; Lu, Shey-Shi |
| 國立臺灣大學 |
2005 |
A 5.2-GHz low-power low-noise amplifier using inGaP-GaAs HBT technology
|
Tai, Chia-Liang; Lu, Shey-Shi; Lin, Yo-Sheng |
| 國立臺灣大學 |
2004 |
An Analysis of the Anomalous Dip in Scattering Parameter S11 of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2004 |
High-quality-factor (33) and high-resonant-frequency (35 GHz) spiral inductors fabricated in 0.25-M mixed-signal/RF-CMOS technology
|
Lin, Yo-Sheng; Wu, Shen-Hong; Chiu, Hong-Wei; Lu, Shey-Shi |
| 國立臺灣大學 |
2004 |
A monolithic 1.57/5.25-GHz concurrent dual-band low-noise amplifier using InGaP/GaAs HBT technology
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Lu, Shey-Shi; Lin, Yo-Sheng; Lee, Bo-Wei |
| 國立臺灣大學 |
2004 |
Temperature Dependence of Q and Noise in Monolithic Transformer Fabricated in a Silicon-Germanium/BiCMOS Technology
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Liang, Hsiao-Bin; Wang, Tao; Lin, Yo-Sheng; Wu, Shen-Hong; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
Theoretical analysis of the anomalous dips of scattering parameter S22 in deep sub-micrometer MOSFETs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
显示项目 31-40 / 59 (共6页)
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