| 國立臺灣大學 |
2005-08 |
High-performance fully integrated 4 GHz CMOS LC VCO in standard 0.18-/spl mu/m CMOS technology
|
Lu, Shey-Shi; Wang, Tao; Lin, Yo-Sheng |
| 國立臺灣大學 |
2005-03 |
A 2.17-dB NF 5-GHz-Band Monolithic CMOS LNA With 10-mW DC Power Consumption
|
Chiu, Hung-Wei; Lu, Shey-Shi; Lin, Yo-Sheng |
| 國立臺灣大學 |
2005-03 |
Temperature-dependence of noise figure of monolithic RF transformers on a thin (20 mu m) silicon substrate
|
Lin, Yo-Sheng; Liang, Hsiao-Bin; Wang, Tao; Lu, Shey-Shi |
| 國立臺灣大學 |
2005-01 |
An Analysis of Base Bias Current Effect on SiGe HBTs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2005-01 |
The Determination of S-Parameters From the Poles of Voltage-Gain Transfer Function for RF IC Design
|
Lu, Shey-Shi; Lin, Yo-Sheng; Chiu, Hung-Wei; Chen, Yu-Chang; Meng, Chin-Chun |
| 國立臺灣大學 |
2005 |
An Analysis of Base Bias Current Effect on SiGe HBT
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2005 |
The determination of S-parameters from the poles of voltage-gain transfer function for RF IC design
|
Lu, Shey-Shi; Lin, Yo-Sheng; Chiu, Hung-Wei; Chen, Yu-Chang; Meng, Chin-Chun |
| 國立臺灣大學 |
2005 |
Temperature-dependence of noise figure of monolithic RF transformers on a thin (20 μm) silicon substrate
|
Lin, Yo-Sheng; Liang, Hsiao-Bin; Wang, Tao; Lu, Shey-Shi |
| 國立臺灣大學 |
2005 |
A 5.2-GHz low-power low-noise amplifier using inGaP-GaAs HBT technology
|
Tai, Chia-Liang; Lu, Shey-Shi; Lin, Yo-Sheng |
| 國立臺灣大學 |
2004 |
An Analysis of the Anomalous Dip in Scattering Parameter S11 of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2004 |
High-quality-factor (33) and high-resonant-frequency (35 GHz) spiral inductors fabricated in 0.25-M mixed-signal/RF-CMOS technology
|
Lin, Yo-Sheng; Wu, Shen-Hong; Chiu, Hong-Wei; Lu, Shey-Shi |
| 國立臺灣大學 |
2004 |
A monolithic 1.57/5.25-GHz concurrent dual-band low-noise amplifier using InGaP/GaAs HBT technology
|
Lu, Shey-Shi; Lin, Yo-Sheng; Lee, Bo-Wei |
| 國立臺灣大學 |
2004 |
Temperature Dependence of Q and Noise in Monolithic Transformer Fabricated in a Silicon-Germanium/BiCMOS Technology
|
Liang, Hsiao-Bin; Wang, Tao; Lin, Yo-Sheng; Wu, Shen-Hong; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
Theoretical analysis of the anomalous dips of scattering parameter S22 in deep sub-micrometer MOSFETs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
An analysis of the kink phenomenon of scattering parameter S22 in RF power mosfets for system-on-chip (SOC) applications
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs
|
Tu, Hsing-Yuan; Chou, Tao-Hsuan; Lin, Yo-Sheng; Chiu, Hsien-Chin; Chen, Ping-Yu; Wu, Wen-Chung; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
An Analysis of Small-Signal Substrate Resistance Effect in Deep-Submicrometer RF MOSFETs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
Lin, Yo-Sheng; Chen, Chih-Chen; Lu, Shey-Shi |
| 國立臺灣大學 |
2002-10 |
An Analysis of the Anomalous Dip in Scattering Parameter of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs)
|
Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu |
| 國立臺灣大學 |
2002 |
An Analysis of the Anomalous Dip in Scattering Parameter S22 of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs)
|
Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu |
| 國立臺灣大學 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
| 國立臺灣大學 |
1999-01 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
|
Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
| 國立臺灣大學 |
1999 |
The effect of gate recess profile on device performance ofGa0.51In0.49P/In0.2Ga0.8Asdoped-channel FET's
|
Lu, Shey-Shi; Meng, Chin-Chun; Lin, Yo-Sheng; Lan, Hai |
| 國立臺灣大學 |
1999 |
Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
|
Lan-Hai;Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen; Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
| 國立臺灣大學 |
1997-06 |
Fabrication and simulation of Ga0.51In0.49P/InxGa1-xAs doped-channel FETs and MMIC amplifiers grown by GSMBE
|
Lu, Shey-Shi; Lin, Yo-Sheng |
| 國立臺灣大學 |
1997-05 |
High-power high-speed Ga0.51In0.49P/InxGa1-xAs doped-channel FET's
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1997 |
Ga0.51In0.49P/In0.15Ga0.85 As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
|
Lin, Yo-Sheng; Sun, Tai-Ping; Lu, Shey-Shi |
| 國立臺灣大學 |
1997 |
High-performance Ga0.51In0.49P/GaAs airbridgegate MISFET's grown by gas-source MBE
|
Lin, Yo-Sheng; Lu, Shey-Shi; Wang, Yo-Jen |
| 國立臺灣大學 |
1996-11 |
Fabrication and simulation of high-power high-speed Ga0.51In0.49P/GaAs airbridge gate MISFET's grown by GSMBE
|
Lin, Yo-Sheng; Wang, Yo-Jen; Lu, Shey-Shi; Meng, Charles Chin-Chun |
| 國立臺灣大學 |
1996-10 |
The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1996 |
High-breakdown-voltage Ga0.51In0.49P channel MESFET's grown by GSMBE
|
Lin, Yo-Sheng; Lu, Shey-Shi |
