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Showing items 11-14 of 14 (1 Page(s) Totally)
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| 國立成功大學 |
2011 |
Influence of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors
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Lin, Hau-Yu;Wu, San-Lein;Cheng, Chao-Ching;Ko, Chih-Hsin;Wann, Clement H.;Lin, You-Ru;Chang, Shoou-Jinn;Wu, Tai-Bor |
| 國立成功大學 |
2009-03-16 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
以氣態源分子束磊晶法成長三五族化合物半導體量子結構與元件
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林佑儒; Lin, You-Ru |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
Showing items 11-14 of 14 (1 Page(s) Totally)
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