| 國立成功大學 |
2006-02 |
Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)(2)S-x treatment
|
Lin, Yow-Jon; Lin, Wen-Xiang; Lee, Ching-Ting; Chien, Feng-Tso |
| 國立彰化師範大學 |
2006-02 |
Enhanced Efficiency in Polymer Light-emitting Diodes Due to the Improvement of Charge-injection Balance
|
Lin, Yow-Jon; Chou, Wei-Yang; Lin, Shih-Ting |
| 國立彰化師範大學 |
2006-02 |
Changes in Optical and Electrical Properties and Surface Recombination Velocity of n-type GaN Due to (NH4)2Sx Treatment
|
Lin, Yow-Jon; Lin, Wen-Xiang; Lee, Ching-Ting; Chien, Feng-Tso |
| 國立彰化師範大學 |
2006-01 |
Formation Mechanisms of Nonalloyed Ohmic Contacts to P-type AlGaN with the Capping Layer
|
Lin, Yow-Jon |
| 國立成功大學 |
2006 |
Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)(2)S-x-treated indium-tin oxide substrates
|
Lin, Yow-Jon; You, Chang-Feng; Chou, Wei-Yang; Lin, Shih-Ting |
| 國立彰化師範大學 |
2006 |
Optical and Electrical Properties of Undoped ZnO Films
|
Lin, Yow-Jon; Tsai, Chia-Lung; Lu, Yang-Ming; Liu, Chia-Jyi |
| 國立虎尾科技大學 |
2006 |
Optical and electrical properties of undoped ZnO films
|
Lin, Yow-Jon;Tsai, Chia-Lung;Lu, Yang-Ming;Liu, Chia-Jyi |
| 國立虎尾科技大學 |
2006 |
Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
|
Lin, Yow-Jon;Chu, Yow-Lin;Liu, Day-Shan;Lee, Chi-Sen;Chien, Feng-Tso |
| 國立彰化師範大學 |
2005-11 |
Schottky Barrier Heights of Ni/Au Contacts to Heavily Mg-doped P-GaN Films with and Without (NH4)2Sx Treatment from Current-voltage Measurements
|
You, Chang-Feng; Chu, Yow-Lin; Lin, Yow-Jon |
| 國立彰化師範大學 |
2005-11 |
Effects of Reactive Ion Etching on Optical and Electrical Properties of Heavily Mg-doped P-type GaN
|
Chu, Yow-Lin; Lin, Yow-Jon |
| 國立成功大學 |
2005-09 |
Changes in surface roughness and work function of indium-tin-oxide due to KrF excimer laser irradiation
|
Lin, Yow-Jon; Baikie, Iain D.; Chou, Wei-Yang; Lin, Shih-Ting; Chang, Hsing-Cheng; Chen, Yao-Ming; Liu, Wen-Fung |
| 國立彰化師範大學 |
2005-09 |
Influence of KrF Excimer Laser Irradiation on Luminescent Performance of Polymer Light-emitting Diodes
|
Lin, Yow-Jon; Chou, Wei-Yang; Lin, Shih-Ting; Chen, Yao-Ming |
| 國立彰化師範大學 |
2005-09 |
Changes in Surface Roughness and Work Function of Indium-tin-oxide Due to KrF Excimer Laser Irradiation
|
Lin, Yow-Jon; Baikie, Iain D. ; Chou, Wei-Yang; Lin, Shih-Ting; Chang, Hsing-Cheng; Chen, Yao-Ming; Liu, Wen-Fung |
| 國立彰化師範大學 |
2005-05 |
Comment on “Unraveling the Conduction Mechanism of Al-doped ZnO Films by Valence Band Soft x-ray Photoemission Spectroscopy” [ Appl. Phys. Lett. 86, 042104 (2005) ]
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2005-05 |
Optical and Electrical Properties of Heavily Mg-doped GaN upon (NH4)2Sx Treatment
|
Lin, Yow-Jon; Chu, Yow-Lin; Huang, Y. S. ; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2005-05 |
Effect of Reactive Ion Etching-induced Defects on the Surface Band Bending of Heavily Mg-doped p-type GaN
|
Lin, Yow-Jon; Chu, Yow-Lin |
| 國立彰化師範大學 |
2005-04 |
Effects of KrF Excimer Laser Irradiation on Surface Work Function of Indium-tin-oxide
|
Lin, Yow-Jon; Chen, Yao-Ming; Wang, Yung-Chi |
| 國立彰化師範大學 |
2005-03 |
Application of the Thermionic Field Emission Model in the Study of a Schottky Barrier of Ni on p-GaN from Current–Voltage Measurements
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2005-03 |
Increase Mechanism of Indium-tin-oxide Work Function by KrF Excimer Laser Irradiation
|
Lin, Yow-Jon; Hsu, Chou-Wei; Chen, Yao-Ming; Wang, Yung-Chi |
| 國立彰化師範大學 |
2005-01 |
Electrical Properties of Ni/Au and Au Contacts on p-type GaN
|
Lin, Yow-Jon |
| 國立成功大學 |
2005 |
Influence of KrF excimer laser irradiation on luminescent performance of polymer light-emitting diodes
|
Lin, Yow-Jon; Chou, Wei-Yang; Lin, Shih-Ting; Chen, Yao-Ming |
| 國立彰化師範大學 |
2004-12 |
Study of Schottky Barrier Heights of Indium-tin-oxide Contacts to P-type GaN
|
Lin, Yow-Jon; Hsu, C. W. |
| 國立彰化師範大學 |
2004-12 |
Comparative Study of Ni/Au and Aucontacts to P-type GaN
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2004-09 |
Comment on “Interpretation of Fermi Level Pinning on 4H–SiC using Synchrotron Photoemission Spectroscopy” [Appl. Phys. Lett. 84, 538 (2004)]
|
Lin, Yow-Jon; Tseng, Chih-Kuo |
| 國立彰化師範大學 |
2004-09 |
Study of Schottky Barrier Heights of Indium-Tin-Oxide on p-GaN Using X-ray Photoelectron Spectroscopy and Current-Voltage Measurements
|
Lin, Yow-Jon; Hsu, Chou-Wei |
| 國立彰化師範大學 |
2004-07 |
Formation Mechanism of Pt Nonalloyed Ohmic Contacts to Mg-doped GaN Activated in Air
|
Lin, Yow-Jon; Wu, K. C. ; Chen, Y. M. ; Cheng, T. J. |
| 國立成功大學 |
2004-04-05 |
Excimer-laser-induced activation of Mg-doped GaN layers
|
Lin, Yow-Jon; Liu, Wen-Fung; Lee, Ching-Ting |
| 國立彰化師範大學 |
2004-04 |
Activation Mechanism of Annealed Mg-doped GaN in Air
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2004-04 |
Excimer-laser-induced Activation of Mg-doped GaN Layers
|
Lin, Yow-Jon; Liu, Wen-Fung; Lee, Ching-Ting |
| 國立彰化師範大學 |
2004-03 |
Electrical Properties of Pt Contacts on p-GaN Activated in Air
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立彰化師範大學 |
2004-01 |
Schottky Barrier Height and Nitrogen-vacancy-related Defects in Ti Alloyed Ohmic Contacts to n-GaN
|
Lin, Yow-Jon; Chen, Yao-Ming; Cheng, Tzyy-Jon; Ker, Quantum |
| 國立彰化師範大學 |
2003-12 |
Comment on “Enhancement of Schottky Barrier Height on AlGaN/GaN Heterostructure by Oxidation Annealing” [Appl. Phys. Lett. 82, 4301 (2003)]
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立彰化師範大學 |
2003-11 |
Investigation of Enhancement Mechanism of Schottky Barrier Height on Oxidized Ir/AlGaN
|
Hsu, C. W. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-08 |
Comment on“Thermally Stable Ir Schottky Contact on AlGaN/GaN Heterostructure”[Appl. Phys. Lett. 82, 391 (2003)]
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-08 |
Nitrogen-vacancy-related Defects and Fermi Level Pinning in n-GaN Schottky Diodes
|
Lin, Yow-Jon; Ker, Quantum; Ho, Ching-Yao; Chang, Hsing-Cheng; Chien, Feng-Tso |
| 國立彰化師範大學 |
2003-07 |
Gallium-vacancy-related Defects in Mg-doped GaN Activated in Air
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-07 |
Band Bending on the Reactive-ion-etched and (NH4)2Sx-treated Mg-doped P-GaN Surface
|
Lin, Yow-Jon; Hsu, C. W. ; Ker, Q. ; Li, Z. D. |
| 國立彰化師範大學 |
2003-05 |
Mechanism Investigation of NiOx in Au/Ni/p-Type GaN Ohmic Contacts Annealed in Air
|
Lee, Ching-Ting; Lin, Yow-Jon; Lee, Tsung-Hsin |
| 國立彰化師範大學 |
2003-05 |
Investigation of Accumulated Carrier Mechanism on Sulfurated GaN Layers
|
Lin, Yow-Jon; Lee, Chi-Sen; Lee, Ching-Ting |
| 國立彰化師範大學 |
2003-04 |
Investigation of Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN
|
Lin, Yow-Jon; Li, Zhen-Dao; Hsu, Chou-Wei; Chien, Feng-Tso; Lee, Ching-Ting; Shao, Sheng-Tien; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2002-12 |
Surface Band Bending, Nitrogen-vacancy-related Defects, and 2.8-eV Photoluminescence Band of (NH4)�2Sx-treated p-GaN
|
Lin, Yow-Jon; Wang, Zhi-Long; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2002-12 |
Investigated the Alloyed Ohmic Mechanism of Ti/Al Contacts to N-GaN
|
Hsu, C. W. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-12 |
Influence of (NH4)2Sx Treatment and Surface Etching Treatment on N-GaN Schottky Contacts
|
Ker, Q. ; Li, Z. D. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-12 |
Activation of Mg in P-type GaN by Excimer Laser
|
Lee, C. S. ; Lee, C. T. ; Hwang, F. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-11 |
Influence of (NH4)2Sx Surface Treatment on P-GaN
|
Lin, Yow-Jon; Wang, Z. L. |
| 國立彰化師範大學 |
2002-10 |
Nonalloyed Ohmic Mechanism of TiN Interfacial Layer in Ti/Al Contacts to (NH4)�2Sx-treated n-type GaN Layers
|
Lee, Ching-Ting; Lin, Yow-Jon; Lin, Chun-Hung |
| 國立彰化師範大學 |
2002 |
Surface Treatment and Passivation of III-nitride LEDs
|
Lee, C. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002 |
Investigation and Characterization of Surface-treated N- and P-type GaN Layers in LED
|
Lee, C. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002 |
Induced Variation in Barrier Height and Ohmic Formation of Oxidized Au/Ni/(NH4)2Sx-treated P-GaN
|
Lin, Yow-Jon; Lee, C. S. ; Lee, C. T. |
| 國立彰化師範大學 |
2002 |
Study the Interfacial Layer for Ti/(NH4)2Sx-treated N-type GaN by using X-ray Hotoelectron Spectroscopy Measurement
|
Lee, C. T. ; Lin, Yow-Jon; Lee, H. Y. ; Lin, C. H. ; Lin, S. C. |
