| 國立彰化師範大學 |
2004-07 |
Formation Mechanism of Pt Nonalloyed Ohmic Contacts to Mg-doped GaN Activated in Air
|
Lin, Yow-Jon; Wu, K. C. ; Chen, Y. M. ; Cheng, T. J. |
| 國立成功大學 |
2004-04-05 |
Excimer-laser-induced activation of Mg-doped GaN layers
|
Lin, Yow-Jon; Liu, Wen-Fung; Lee, Ching-Ting |
| 國立彰化師範大學 |
2004-04 |
Activation Mechanism of Annealed Mg-doped GaN in Air
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2004-04 |
Excimer-laser-induced Activation of Mg-doped GaN Layers
|
Lin, Yow-Jon; Liu, Wen-Fung; Lee, Ching-Ting |
| 國立彰化師範大學 |
2004-03 |
Electrical Properties of Pt Contacts on p-GaN Activated in Air
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立彰化師範大學 |
2004-01 |
Schottky Barrier Height and Nitrogen-vacancy-related Defects in Ti Alloyed Ohmic Contacts to n-GaN
|
Lin, Yow-Jon; Chen, Yao-Ming; Cheng, Tzyy-Jon; Ker, Quantum |
| 國立彰化師範大學 |
2003-12 |
Comment on “Enhancement of Schottky Barrier Height on AlGaN/GaN Heterostructure by Oxidation Annealing” [Appl. Phys. Lett. 82, 4301 (2003)]
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立彰化師範大學 |
2003-11 |
Investigation of Enhancement Mechanism of Schottky Barrier Height on Oxidized Ir/AlGaN
|
Hsu, C. W. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-08 |
Comment on“Thermally Stable Ir Schottky Contact on AlGaN/GaN Heterostructure”[Appl. Phys. Lett. 82, 391 (2003)]
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-08 |
Nitrogen-vacancy-related Defects and Fermi Level Pinning in n-GaN Schottky Diodes
|
Lin, Yow-Jon; Ker, Quantum; Ho, Ching-Yao; Chang, Hsing-Cheng; Chien, Feng-Tso |
| 國立彰化師範大學 |
2003-07 |
Gallium-vacancy-related Defects in Mg-doped GaN Activated in Air
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-07 |
Band Bending on the Reactive-ion-etched and (NH4)2Sx-treated Mg-doped P-GaN Surface
|
Lin, Yow-Jon; Hsu, C. W. ; Ker, Q. ; Li, Z. D. |
| 國立彰化師範大學 |
2003-05 |
Mechanism Investigation of NiOx in Au/Ni/p-Type GaN Ohmic Contacts Annealed in Air
|
Lee, Ching-Ting; Lin, Yow-Jon; Lee, Tsung-Hsin |
| 國立彰化師範大學 |
2003-05 |
Investigation of Accumulated Carrier Mechanism on Sulfurated GaN Layers
|
Lin, Yow-Jon; Lee, Chi-Sen; Lee, Ching-Ting |
| 國立彰化師範大學 |
2003-04 |
Investigation of Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN
|
Lin, Yow-Jon; Li, Zhen-Dao; Hsu, Chou-Wei; Chien, Feng-Tso; Lee, Ching-Ting; Shao, Sheng-Tien; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2002-12 |
Surface Band Bending, Nitrogen-vacancy-related Defects, and 2.8-eV Photoluminescence Band of (NH4)�2Sx-treated p-GaN
|
Lin, Yow-Jon; Wang, Zhi-Long; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2002-12 |
Investigated the Alloyed Ohmic Mechanism of Ti/Al Contacts to N-GaN
|
Hsu, C. W. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-12 |
Influence of (NH4)2Sx Treatment and Surface Etching Treatment on N-GaN Schottky Contacts
|
Ker, Q. ; Li, Z. D. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-12 |
Activation of Mg in P-type GaN by Excimer Laser
|
Lee, C. S. ; Lee, C. T. ; Hwang, F. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-11 |
Influence of (NH4)2Sx Surface Treatment on P-GaN
|
Lin, Yow-Jon; Wang, Z. L. |
| 國立彰化師範大學 |
2002-10 |
Nonalloyed Ohmic Mechanism of TiN Interfacial Layer in Ti/Al Contacts to (NH4)�2Sx-treated n-type GaN Layers
|
Lee, Ching-Ting; Lin, Yow-Jon; Lin, Chun-Hung |
| 國立彰化師範大學 |
2002 |
Surface Treatment and Passivation of III-nitride LEDs
|
Lee, C. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002 |
Investigation and Characterization of Surface-treated N- and P-type GaN Layers in LED
|
Lee, C. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002 |
Induced Variation in Barrier Height and Ohmic Formation of Oxidized Au/Ni/(NH4)2Sx-treated P-GaN
|
Lin, Yow-Jon; Lee, C. S. ; Lee, C. T. |
| 國立彰化師範大學 |
2002 |
Study the Interfacial Layer for Ti/(NH4)2Sx-treated N-type GaN by using X-ray Hotoelectron Spectroscopy Measurement
|
Lee, C. T. ; Lin, Yow-Jon; Lee, H. Y. ; Lin, C. H. ; Lin, S. C. |
