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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"lin yow jon"的相关文件
显示项目 161-170 / 186 (共19页)
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| 國立彰化師範大學 |
2002-12 |
Surface Band Bending, Nitrogen-vacancy-related Defects, and 2.8-eV Photoluminescence Band of (NH4)�2Sx-treated p-GaN
|
Lin, Yow-Jon; Wang, Zhi-Long; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2002-12 |
Investigated the Alloyed Ohmic Mechanism of Ti/Al Contacts to N-GaN
|
Hsu, C. W. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-12 |
Influence of (NH4)2Sx Treatment and Surface Etching Treatment on N-GaN Schottky Contacts
|
Ker, Q. ; Li, Z. D. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-12 |
Activation of Mg in P-type GaN by Excimer Laser
|
Lee, C. S. ; Lee, C. T. ; Hwang, F. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-11 |
Influence of (NH4)2Sx Surface Treatment on P-GaN
|
Lin, Yow-Jon; Wang, Z. L. |
| 國立彰化師範大學 |
2002-10 |
Nonalloyed Ohmic Mechanism of TiN Interfacial Layer in Ti/Al Contacts to (NH4)�2Sx-treated n-type GaN Layers
|
Lee, Ching-Ting; Lin, Yow-Jon; Lin, Chun-Hung |
| 國立彰化師範大學 |
2002 |
Surface Treatment and Passivation of III-nitride LEDs
|
Lee, C. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002 |
Investigation and Characterization of Surface-treated N- and P-type GaN Layers in LED
|
Lee, C. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002 |
Induced Variation in Barrier Height and Ohmic Formation of Oxidized Au/Ni/(NH4)2Sx-treated P-GaN
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Lin, Yow-Jon; Lee, C. S. ; Lee, C. T. |
| 國立彰化師範大學 |
2002 |
Study the Interfacial Layer for Ti/(NH4)2Sx-treated N-type GaN by using X-ray Hotoelectron Spectroscopy Measurement
|
Lee, C. T. ; Lin, Yow-Jon; Lee, H. Y. ; Lin, C. H. ; Lin, S. C. |
显示项目 161-170 / 186 (共19页)
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