| 國立彰化師範大學 |
2005-05 |
Effect of Reactive Ion Etching-induced Defects on the Surface Band Bending of Heavily Mg-doped p-type GaN
|
Lin, Yow-Jon; Chu, Yow-Lin |
| 國立彰化師範大學 |
2005-04 |
Effects of KrF Excimer Laser Irradiation on Surface Work Function of Indium-tin-oxide
|
Lin, Yow-Jon; Chen, Yao-Ming; Wang, Yung-Chi |
| 國立彰化師範大學 |
2005-03 |
Application of the Thermionic Field Emission Model in the Study of a Schottky Barrier of Ni on p-GaN from Current–Voltage Measurements
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2005-03 |
Increase Mechanism of Indium-tin-oxide Work Function by KrF Excimer Laser Irradiation
|
Lin, Yow-Jon; Hsu, Chou-Wei; Chen, Yao-Ming; Wang, Yung-Chi |
| 國立彰化師範大學 |
2005-01 |
Electrical Properties of Ni/Au and Au Contacts on p-type GaN
|
Lin, Yow-Jon |
| 國立成功大學 |
2005 |
Influence of KrF excimer laser irradiation on luminescent performance of polymer light-emitting diodes
|
Lin, Yow-Jon; Chou, Wei-Yang; Lin, Shih-Ting; Chen, Yao-Ming |
| 國立彰化師範大學 |
2004-12 |
Study of Schottky Barrier Heights of Indium-tin-oxide Contacts to P-type GaN
|
Lin, Yow-Jon; Hsu, C. W. |
| 國立彰化師範大學 |
2004-12 |
Comparative Study of Ni/Au and Aucontacts to P-type GaN
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2004-09 |
Comment on “Interpretation of Fermi Level Pinning on 4H–SiC using Synchrotron Photoemission Spectroscopy” [Appl. Phys. Lett. 84, 538 (2004)]
|
Lin, Yow-Jon; Tseng, Chih-Kuo |
| 國立彰化師範大學 |
2004-09 |
Study of Schottky Barrier Heights of Indium-Tin-Oxide on p-GaN Using X-ray Photoelectron Spectroscopy and Current-Voltage Measurements
|
Lin, Yow-Jon; Hsu, Chou-Wei |
| 國立彰化師範大學 |
2004-07 |
Formation Mechanism of Pt Nonalloyed Ohmic Contacts to Mg-doped GaN Activated in Air
|
Lin, Yow-Jon; Wu, K. C. ; Chen, Y. M. ; Cheng, T. J. |
| 國立成功大學 |
2004-04-05 |
Excimer-laser-induced activation of Mg-doped GaN layers
|
Lin, Yow-Jon; Liu, Wen-Fung; Lee, Ching-Ting |
| 國立彰化師範大學 |
2004-04 |
Activation Mechanism of Annealed Mg-doped GaN in Air
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2004-04 |
Excimer-laser-induced Activation of Mg-doped GaN Layers
|
Lin, Yow-Jon; Liu, Wen-Fung; Lee, Ching-Ting |
| 國立彰化師範大學 |
2004-03 |
Electrical Properties of Pt Contacts on p-GaN Activated in Air
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立彰化師範大學 |
2004-01 |
Schottky Barrier Height and Nitrogen-vacancy-related Defects in Ti Alloyed Ohmic Contacts to n-GaN
|
Lin, Yow-Jon; Chen, Yao-Ming; Cheng, Tzyy-Jon; Ker, Quantum |
| 國立彰化師範大學 |
2003-12 |
Comment on “Enhancement of Schottky Barrier Height on AlGaN/GaN Heterostructure by Oxidation Annealing” [Appl. Phys. Lett. 82, 4301 (2003)]
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立彰化師範大學 |
2003-11 |
Investigation of Enhancement Mechanism of Schottky Barrier Height on Oxidized Ir/AlGaN
|
Hsu, C. W. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-08 |
Comment on“Thermally Stable Ir Schottky Contact on AlGaN/GaN Heterostructure”[Appl. Phys. Lett. 82, 391 (2003)]
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-08 |
Nitrogen-vacancy-related Defects and Fermi Level Pinning in n-GaN Schottky Diodes
|
Lin, Yow-Jon; Ker, Quantum; Ho, Ching-Yao; Chang, Hsing-Cheng; Chien, Feng-Tso |
| 國立彰化師範大學 |
2003-07 |
Gallium-vacancy-related Defects in Mg-doped GaN Activated in Air
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-07 |
Band Bending on the Reactive-ion-etched and (NH4)2Sx-treated Mg-doped P-GaN Surface
|
Lin, Yow-Jon; Hsu, C. W. ; Ker, Q. ; Li, Z. D. |
| 國立彰化師範大學 |
2003-05 |
Mechanism Investigation of NiOx in Au/Ni/p-Type GaN Ohmic Contacts Annealed in Air
|
Lee, Ching-Ting; Lin, Yow-Jon; Lee, Tsung-Hsin |
| 國立彰化師範大學 |
2003-05 |
Investigation of Accumulated Carrier Mechanism on Sulfurated GaN Layers
|
Lin, Yow-Jon; Lee, Chi-Sen; Lee, Ching-Ting |
| 國立彰化師範大學 |
2003-04 |
Investigation of Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN
|
Lin, Yow-Jon; Li, Zhen-Dao; Hsu, Chou-Wei; Chien, Feng-Tso; Lee, Ching-Ting; Shao, Sheng-Tien; Chang, Hsing-Cheng |
