|
English
|
正體中文
|
简体中文
|
Total items :0
|
|
Visitors :
52727241
Online Users :
583
Project Commissioned by the Ministry of Education
Project Executed by National Taiwan University Library
|
|
|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"lin yow jon"
Showing items 146-155 of 186 (19 Page(s) Totally)
<< < 10 11 12 13 14 15 16 17 18 19 > >>
View [10|25|50] records per page
| 國立彰化師範大學 |
2004-07 |
Formation Mechanism of Pt Nonalloyed Ohmic Contacts to Mg-doped GaN Activated in Air
|
Lin, Yow-Jon; Wu, K. C. ; Chen, Y. M. ; Cheng, T. J. |
| 國立成功大學 |
2004-04-05 |
Excimer-laser-induced activation of Mg-doped GaN layers
|
Lin, Yow-Jon; Liu, Wen-Fung; Lee, Ching-Ting |
| 國立彰化師範大學 |
2004-04 |
Activation Mechanism of Annealed Mg-doped GaN in Air
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2004-04 |
Excimer-laser-induced Activation of Mg-doped GaN Layers
|
Lin, Yow-Jon; Liu, Wen-Fung; Lee, Ching-Ting |
| 國立彰化師範大學 |
2004-03 |
Electrical Properties of Pt Contacts on p-GaN Activated in Air
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立彰化師範大學 |
2004-01 |
Schottky Barrier Height and Nitrogen-vacancy-related Defects in Ti Alloyed Ohmic Contacts to n-GaN
|
Lin, Yow-Jon; Chen, Yao-Ming; Cheng, Tzyy-Jon; Ker, Quantum |
| 國立彰化師範大學 |
2003-12 |
Comment on “Enhancement of Schottky Barrier Height on AlGaN/GaN Heterostructure by Oxidation Annealing” [Appl. Phys. Lett. 82, 4301 (2003)]
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立彰化師範大學 |
2003-11 |
Investigation of Enhancement Mechanism of Schottky Barrier Height on Oxidized Ir/AlGaN
|
Hsu, C. W. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-08 |
Comment on“Thermally Stable Ir Schottky Contact on AlGaN/GaN Heterostructure”[Appl. Phys. Lett. 82, 391 (2003)]
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-08 |
Nitrogen-vacancy-related Defects and Fermi Level Pinning in n-GaN Schottky Diodes
|
Lin, Yow-Jon; Ker, Quantum; Ho, Ching-Yao; Chang, Hsing-Cheng; Chien, Feng-Tso |
Showing items 146-155 of 186 (19 Page(s) Totally)
<< < 10 11 12 13 14 15 16 17 18 19 > >>
View [10|25|50] records per page
|
