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"lin yow jon"
Showing items 156-165 of 186 (19 Page(s) Totally)
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| 國立彰化師範大學 |
2003-07 |
Gallium-vacancy-related Defects in Mg-doped GaN Activated in Air
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Lin, Yow-Jon |
| 國立彰化師範大學 |
2003-07 |
Band Bending on the Reactive-ion-etched and (NH4)2Sx-treated Mg-doped P-GaN Surface
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Lin, Yow-Jon; Hsu, C. W. ; Ker, Q. ; Li, Z. D. |
| 國立彰化師範大學 |
2003-05 |
Mechanism Investigation of NiOx in Au/Ni/p-Type GaN Ohmic Contacts Annealed in Air
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Lee, Ching-Ting; Lin, Yow-Jon; Lee, Tsung-Hsin |
| 國立彰化師範大學 |
2003-05 |
Investigation of Accumulated Carrier Mechanism on Sulfurated GaN Layers
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Lin, Yow-Jon; Lee, Chi-Sen; Lee, Ching-Ting |
| 國立彰化師範大學 |
2003-04 |
Investigation of Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN
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Lin, Yow-Jon; Li, Zhen-Dao; Hsu, Chou-Wei; Chien, Feng-Tso; Lee, Ching-Ting; Shao, Sheng-Tien; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2002-12 |
Surface Band Bending, Nitrogen-vacancy-related Defects, and 2.8-eV Photoluminescence Band of (NH4)�2Sx-treated p-GaN
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Lin, Yow-Jon; Wang, Zhi-Long; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2002-12 |
Investigated the Alloyed Ohmic Mechanism of Ti/Al Contacts to N-GaN
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Hsu, C. W. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-12 |
Influence of (NH4)2Sx Treatment and Surface Etching Treatment on N-GaN Schottky Contacts
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Ker, Q. ; Li, Z. D. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-12 |
Activation of Mg in P-type GaN by Excimer Laser
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Lee, C. S. ; Lee, C. T. ; Hwang, F. T. ; Lin, Yow-Jon |
| 國立彰化師範大學 |
2002-11 |
Influence of (NH4)2Sx Surface Treatment on P-GaN
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Lin, Yow-Jon; Wang, Z. L. |
Showing items 156-165 of 186 (19 Page(s) Totally)
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