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机构 日期 题名 作者
國立成功大學 2006-03 Performance improvement in tensile-strained In(0.5)A1(0.5)As/InxGa1-xAs/In(0.5)A1(0.5)As metamorphic HEMT Hsu, Wei-Chou; Huang, Dong-Hai; Lin, Yu-Shyan; Chen, Yeong-Jia; Huang, Jun-Chin; Wu, Chang-Luen
國立成功大學 2006 Strain-relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Juin-Chin; Wu, Chang-Luen
國立成功大學 2006 n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors Lin, Yu-Shyan; Huang, Dong-Hai; Hsu, Wei-Chou; Wang, Tzong-Bin; Hsu, Rong-Tay; Wu, Yu-Huei
國立成功大學 2005-02 High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen
國立成功大學 2005-02 InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei
國立成功大學 2004-06 Characteristics of spike-free single and double heterostructure-emitter bipolar transistors Lin, Yu-Shyan; Hsu, Wei-Chou; Jong, Fuh-Cheng; Chiou, Yu-Zung; Chen, Yeong-Jia; Tang, Jing-Jou
國立成功大學 2004-05 Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan
國立成功大學 2004-05 Characteristics of In0.52Al0.48As/InxGa1-xAsyP1-y/ In0.52Al0.48As high electron-mobility transistors Chen, Yen-Wei; Hsu, W. C.; Chen, Y. J.; Hsu, R. T.; Wu, Yue-Huei; Lin, Yu-Shyan
國立成功大學 2003-11 Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia; Lin, Yu-Shyan
國立成功大學 2002-02-01 Characteristics of delta-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 schottky layer Hsu, Wei-Chou; Lee, Ching-Sung; Lin, Yu-Shyan

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