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"lin yu shyan"的相關文件
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| 國立成功大學 |
2015-05 |
Characterization of Interfaces Between Contacts and Active Layer in Organic Photovoltaics Using Impedance Spectroscopy and Equivalent Circuit Model
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Yao, En-Ping; Shiu, Shiun-Ming; Tsai, Yi-Jhe; Lin, Yu-Shyan; Hsu, Wei-Chou |
| 國立成功大學 |
2015-01 |
Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2 passivation
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Lin, Yu-Shyan; Lin, Shin-Fu; Hsu, Wei-Chou |
| 國立成功大學 |
2013-02-01 |
Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain
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Chan, Ching-Hsiang; Ho, Ching-Hwa; Chen, Ming-Kai; Lin, Yu-Shyan; Huang, Ying-Sheng; Hsu, Wei-Chou |
| 國立成功大學 |
2007-10 |
Thermal-stable characteristics of metamorphic double delta-doped heterostructure field-effect transistor
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Jun-Chin |
| 國立成功大學 |
2007-07 |
A metamorphic heterostructure field-effect transistor with a double delta-doped channel
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Yeh, Jung-Han; Huang, Jun-Chin |
| 國立成功大學 |
2007-06 |
An improved symmetrically-graded doped-channel heterostructure field-effect transistor
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Su, Ke-Hua; Hsu, Wei-Chou; Hu, Po-Jung; Chen, Yeong-Jia; Lee, Ching-Sung; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2007 |
Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses
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Wang, Tzong-Bin; Hsu, Wei-Chou; Su, Jun-Long; Hsu, Rong-Tay; Wu, Yu-Huei; Lin, Yu-Shyan; Su, Ke-Hua |
| 國立成功大學 |
2006-06 |
Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Wu, Yue-Huei; Hsu, Rong-Tay; Huang, Juin-Chin; Liao, Yin-Kai |
| 國立成功大學 |
2006-04 |
Improved InAlGaP-based heterostructure field-effect transistors
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa |
| 國立成功大學 |
2006-03 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B. |
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