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"lin yu shyan"的相關文件
顯示項目 11-24 / 24 (共1頁) 1 每頁顯示[10|25|50]項目
| 國立成功大學 |
2006-03 |
Performance improvement in tensile-strained In(0.5)A1(0.5)As/InxGa1-xAs/In(0.5)A1(0.5)As metamorphic HEMT
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Hsu, Wei-Chou; Huang, Dong-Hai; Lin, Yu-Shyan; Chen, Yeong-Jia; Huang, Jun-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006 |
Strain-relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Juin-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006 |
n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors
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Lin, Yu-Shyan; Huang, Dong-Hai; Hsu, Wei-Chou; Wang, Tzong-Bin; Hsu, Rong-Tay; Wu, Yu-Huei |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
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Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
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Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei |
| 國立成功大學 |
2004-06 |
Characteristics of spike-free single and double heterostructure-emitter bipolar transistors
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Lin, Yu-Shyan; Hsu, Wei-Chou; Jong, Fuh-Cheng; Chiou, Yu-Zung; Chen, Yeong-Jia; Tang, Jing-Jou |
| 國立成功大學 |
2004-05 |
Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor
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Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan |
| 國立成功大學 |
2004-05 |
Characteristics of In0.52Al0.48As/InxGa1-xAsyP1-y/ In0.52Al0.48As high electron-mobility transistors
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Chen, Yen-Wei; Hsu, W. C.; Chen, Y. J.; Hsu, R. T.; Wu, Yue-Huei; Lin, Yu-Shyan |
| 國立成功大學 |
2003-11 |
Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
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Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia; Lin, Yu-Shyan |
| 國立成功大學 |
2002-02-01 |
Characteristics of delta-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 schottky layer
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Hsu, Wei-Chou; Lee, Ching-Sung; Lin, Yu-Shyan |
| 國立成功大學 |
2002-02 |
High breakdown characteristic 6-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT
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Chen, Yen-Wei; Hsu, Wei-Chou; Shieh, Her-Ming; Chen, Yeong-Jia; Lin, Yu-Shyan; Li, Yih-Juan; Wang, Tzong-Bin |
| 國立成功大學 |
2001-01-15 |
An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled delta-doping InP channel
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Chen, Yeong-Jia; Chen, Yen-Wei; Lin, Yu-Shyan; Yeh, Chia-Yen; Li, Yih-Juan; Hsu, Wei-Chou |
| 國立成功大學 |
2000-07 |
Investigation of a graded channel InGaAs/GaAs heterostructure transistor
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Li, Yih-Juan; Su, Jan-Shing; Lin, Yu-Shyan; Hsu, Wei-Chou |
| 國立成功大學 |
2000-05-22 |
In0.34Al0.66As0.85Sb0.15/delta(n(+))-InP heterostructure field-effect transistors
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Lin, Yu-Shyan; Hsu, Wei-Chou; Yeh, Chia-Yen; Shieh, Her-Ming |
顯示項目 11-24 / 24 (共1頁) 1 每頁顯示[10|25|50]項目
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