| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
|
Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
|
Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:52:47Z |
Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
|
Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi |
| 國立交通大學 |
2018-06-21 |
Halbleitervorrichtung und Verfahren zur Herstellung derselben
|
Hsieh, Ting-En; Lin, Yueh-Chin; Han, Ping-Cheng; Wu, Chia-Hsun; Huang, Chung-Kai; Liu, Shih-Chien; Chang, Edward Yi; HSIEH TING-EN; LIN YUEH-CHIN; HAN PING-CHENG; WU CHIA-HSUN; HUANG CHUNG-KAI; LIU SHIH-CHIEN; CHANG EDWARD YI |
| 國立交通大學 |
2017-04-21T06:56:27Z |
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As
|
Do, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:56Z |
Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
|
Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
|
Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
|
Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:38Z |
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
|
Quang Ho Luc; Cheng, Shou Po; Chang, Po Chun; Huy Binh Do; Chen, Jin Han; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:20Z |
High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
|
Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Liu, Shin Chien; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:20Z |
Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment
|
Hsiao, Chih-Jen; Minh-Thien-Huu Ha; Hsu, Ching-Yi; Lin, Yueh-Chin; Chang, Sheng-Po; Chang, Shoou-Jinn; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:20Z |
Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
|
Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Liu, Shih-Chien; Lin, Yen-Ku; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:19Z |
Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
|
Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:50Z |
An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure
|
Yao, Jing-Neng; Lin, Yueh-Chin; Chuang, Yu-Lin; Huang, Yu-Xiang; Shih, Wang-Cheng; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:42Z |
In-x Ga1-x As Materials for Post CMOS Application: Materials and Device Aspects
|
Chang, Edward Yi; Lin, Yueh-Chin; Luc, Quang-Ho; Trinh, Hai-Dang; Yao, Jing-Neng; Chang, Po-Chun |
| 國立交通大學 |
2017-04-21T06:49:23Z |
The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates
|
Hsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:48:56Z |
STUDY ON THE ELECTRICAL CHARACTERISTICS OF IN SITU PEALD-PASSIVATED HFO2/IN(0.53)GA(0.47)AS MOSCAP AND MOSFET STRUCTURES
|
Luc, Quang-Ho; Chang, Po-Chun; Do, Huy-Binh; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:48:55Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
|
Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立成功大學 |
2016-09 |
Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment
|
Hsiao, Chih-Jen;Ha, Minh-Thien-Huu;Hsu, Ching-Yi;Lin, Yueh-Chin;Chang, Sheng-Po;Chang, Shoou-Jinn;Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:17Z |
Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor
|
Wu, Wen-Hao; Lin, Yueh-Chin; Hou, Tzu-Ching; Lin, Tai-Wei; Hsu, Hisang-Hua; Wong, Yuen-Yee; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:14Z |
Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications
|
Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:08Z |
Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
|
Luc, Quang Ho; Do, Huy Binh; Ha, Minh Thien Huu; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:08Z |
Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
|
Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2015-12-02T02:59:34Z |
GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
|
Hsieh, Ting-En; Lin, Yueh-Chin; Li, Fang-Ming; Shi, Wang-Cheng; Huang, Yu-Xiang; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi |
| 國立交通大學 |
2015-12-02T02:59:28Z |
Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications
|
Hsieh, Ting-En; Lin, Yueh-Chin; Liao, Jen-Ting; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi |
| 國立交通大學 |
2015-07-21T08:31:14Z |
Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor
|
Shrestha, Niraj Man; Lin, Yueh-Chin; Chang, Han-Tung; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2014-12-16T06:15:18Z |
ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
|
CHANG EDWARD YI; CHANG CHIA-HUA; LIN YUEH-CHIN |
| 國立交通大學 |
2014-12-16T06:15:17Z |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
|
CHANG Edward Yi; LIN Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:15Z |
Dielectric structure, transistor and manufacturing method thereof
|
Chang Edward-Yi; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:13Z |
METHOD FOR FABRICATING A GaN-BASED THIN FILM TRANSISTOR
|
Chang Yi; Chang Chia-Hua; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:05Z |
ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
|
CHANG EDWARD YI; Chang Chia-Hua; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:03Z |
Semiconductor Device
|
CHANG Yi; CHANG Chia-Hua; LIN Yueh-Chin; CHEN Yu-Kong; SHIE Ting-En |
| 國立交通大學 |
2014-12-16T06:15:01Z |
STRUCTURE OF HIGH ELECTRON MOBILITY TRANSISTOR GROWTH ON SI SUBSTRATE AND THE METHOD THEREOF
|
YI CHANG Edward; Tang Shih-Hsuan; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:14:59Z |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
|
CHANG Edward Yi; LIN Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:14:58Z |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
|
Chang Edward Yi.; Lin Yueh-Chin; Chang Chia-Hua; Trinh Hai-Dang |
| 國立交通大學 |
2014-12-16T06:14:57Z |
HIGH ELECTRON MOBILITY GaN-BASED TRANSISTOR STRUCTURE
|
CHANG EDWARD YI; CHANG CHIA-HUA; LIN YUEH-CHIN; CHEN YU KONG; LIU SHIH-CHIEN |
| 國立交通大學 |
2014-12-16T06:14:48Z |
Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure
|
LIN Yueh-Chin; CHANG Edward Yi; CHUANG Ting-Wei |
| 國立交通大學 |
2014-12-16T06:14:43Z |
Enhanced GaN Transistor and the Forming Method Thereof
|
CHANG Yi; LIN Yueh-Chin; WANG Huan-Chung |
| 國立交通大學 |
2014-12-16T06:14:02Z |
Method for forming T-shaped gate structure
|
Chang Edward Yi; Huang Lu-Che; Chang Chia-Hua; Lin Yueh-Chin; Chieng Wei-Hua; Liu Shih-Chien |
| 國立交通大學 |
2014-12-16T06:14:02Z |
Method for fabricating a GaN-based thin film transistor
|
Chang Yi; Chang Chia-Hua; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:13:59Z |
III-V metal-oxide-semiconductor device
|
Chang Edward Yi; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:13:50Z |
Semiconductor device
|
Chang Yi; Chang Chia-Hua; Lin Yueh-Chin; Chen Yu-Kong; Shie Ting-En |
| 國立交通大學 |
2014-12-16T06:13:49Z |
Structure of high electron mobility transistor growth on Si substrate and the method thereof
|
Yi Chang Edward; Tang Shih-Hsuan; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:47:56Z |
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs
|
Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh |
| 國立交通大學 |
2014-12-08T15:42:39Z |
Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures
|
Wu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Hsu, Li-Han |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
|
Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei |
| 國立交通大學 |
2014-12-08T15:36:57Z |
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
|
Liu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:45Z |
Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
|
Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
|
Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
