|
"lin yueh chin"的相关文件
显示项目 76-100 / 108 (共5页)
<< < 1 2 3 4 5 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
|
Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei |
| 國立交通大學 |
2014-12-08T15:36:57Z |
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
|
Liu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:45Z |
Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
|
Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
|
Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:26Z |
The Materials Integration of Ge and InxGa1-xAs on Si Template for Next Generation CMOS Applications
|
Chang, Edward Yi; Tang, Shih-Hsuan; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
|
Quang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:36:09Z |
Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application
|
Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:08Z |
Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate
|
Lin, Yueh-Chin; Huang, Mao-Lin; Chen, Chen-Yu; Chen, Meng-Ku; Lin, Hung-Ta; Tsai, Pang-Yan; Lin, Chun-Hsiung; Chang, Hui-Cheng; Lee, Tze-Liang; Lo, Chia-Chiung; Jang, Syun-Ming; Diaz, Carlos H.; Hwang, He-Yong; Sun, Yuan-Chen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:35:18Z |
Studying of InSb MOS Capacitors for Post CMOS Application
|
Chang, Edward Yi; Hai-Dang Trinh; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:35:14Z |
Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance
|
Chiu, Yu-Sheng; Lin, Tai-Ming; Nguyen, Hong-Quan; Weng, Yu-Chen; Nguyen, Chi-Lang; Lin, Yueh-Chin; Yu, Hung-Wei; Chang, Edward Yi; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:33:04Z |
Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application
|
Lin, Yueh-Chin; Chang, Chih-Hsiang; Li, Fang-Ming; Hsu, Li-Han; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:33:03Z |
Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density
|
Hai-Dang Trinh; Lin, Yueh-Chin; Minh-Thuy Nguyen; Hong-Quan Nguyen; Quoc-Van Duong; Quang-Ho Luc; Wang, Shin-Yuan; Manh-Nghia Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:32:15Z |
Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
|
Lin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:31:26Z |
Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
|
Hai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:31:04Z |
Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
|
Trinh, Hai-Dang; Lin, Yueh-Chin; Kuo, Chien-I; Chang, Edward Yi; Hong-Quan Nguyen; Wong, Yuen-Yee; Yu, Chih-Chieh; Chen, Chi-Ming; Chang, Chia-Yuan; Wu, Jyun-Yi; Chiu, Han-Chin; Yu, Terrence; Chang, Hui-Cheng; Tsai, Joseph; Hwang, David |
| 國立交通大學 |
2014-12-08T15:30:40Z |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
|
Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
|
Wong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:29:06Z |
Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
|
Chang, Chia-Hua; Shie, Tin-En; Lin, Yueh-Chin; Kakushima, K.; Iwai, H.; Lu, Po-Ching; Lin, Ting-Chun; Huang, Guan Ning; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:07Z |
Study of La2O3/HfO2 Gate Dielectric for n-InAs Metal-Oxide-Semiconductor Capacitor
|
Lin, Yueh-Chin; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Shie, Tin-En; Huang, Guan-Ning; Lu, Po-Ching; Lin, Ting-Chun; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:25:19Z |
On the doping effects for linearity improvement of InGaP/InGaAs PHEMT
|
Lin, Yueh-Chin; Chang, J. W.; Chang, Edward Yi; Chang, X. Y. |
| 國立交通大學 |
2014-12-08T15:24:17Z |
Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs
|
Chen, Shih-Hung; Lin, Yueh-Chin; Linten, Dimitri; Scholz, Mirko; Hellings, Geert; Chang, Edward Yi; Groeseneken, Guido |
| 國立交通大學 |
2014-12-08T15:23:37Z |
Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
|
Lin, Yueh-Chin; Kuo, Tza-Yao; Chuang, Yu-Lin; Wu, Chien-Hua; Chang, Chia-Hua; Huang, Kuan-Ning; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:22:04Z |
Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
|
Trinh, Hai-Dang; Lin, Yueh-Chin; Wang, Huan-Chung; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Kawanago, Takamasa; Lin, Yan-Gu; Chen, Chi-Ming; Wong, Yuen-Yee; Huang, Guan-Ning; Hudait, Mantu; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:21:53Z |
Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz
|
Hsu, Li-Han; Oh, Chee-Way; Wu, Wei-Cheng; Chang, Edward Yi; Zirath, Herbert; Wang, Chin-Te; Tsai, Szu-Ping; Lim, Wee-Chin; Lin, Yueh-Chin |
显示项目 76-100 / 108 (共5页)
<< < 1 2 3 4 5 > >>
每页显示[10|25|50]项目
|
