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"lin yueh chin"的相關文件
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| 國立交通大學 |
2020-05-05T00:01:32Z |
Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications
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Chang, Edward Yi; Chien, Chao Hsin; Iwai, Hiroshi; Tsutsui, Kazuo; Kakushima, Kuniyuki; Nagarajan, Venkatesan; Hsu, Heng-Tung; Yao, Jing Neng; Wu, Chia-Hsun; Lee, Jin Hwa; Hsu, Chia Chieh; Lin, Yueh-Chin; Lin, Jia-Ching; Huang, Kuan Ning |
| 佛光大學 |
2020 |
牧場管理應用靈芝複方添加於飼糧中對蘆花雞肥育增重與成本效益分析之研究
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林月勤; LIN, YUEH-CHIN |
| 國立交通大學 |
2019-09-02T07:46:17Z |
Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device Applications
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Wu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi |
| 國立交通大學 |
2019-09-02T07:45:39Z |
HfO2/AIN/ln(0.53)Ga(0.47)As MOS Devices Electrical Properties and Reliability Studies
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Yi-Chang, Edward; Quang-Ho Luc; Huy-Binh Do; Chang, Po-Chun; Lin, Yueh-Chin |
| 國立交通大學 |
2019-08-02T02:18:36Z |
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
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Yao, Jing Neng; Lin, Yueh Chin; Lin, Min Song; Huang, Ting Jui; Hsu, Heng Tung; Sze, Simon M.; Chang, Edward Y. |
| 國立交通大學 |
2019-08-02T02:18:33Z |
A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects
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Nagarajan, Venkatesan; Chen, Kun-Ming; Wang, Huan-Chung; Singh, Sankalp Kumar; Anandan, Deepak; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-08-02T02:18:27Z |
Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications
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Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-03T06:44:27Z |
Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
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Liu, Shih-Chien; Huang, Chung-Kai; Chang, Chia-Hua; Lin, Yueh-Chin; Chen, Bo-Yuan; Tsai, Szu-Ping; Majlis, Burhanuddin Yeop; Dee, Chang-Fu; Chang, Edward Yi |
| 國立交通大學 |
2019-04-03T06:43:48Z |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
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Do, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Nguyen, Tuan Anh; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-04-03T06:41:00Z |
Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer
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Liao, Shun Sing; Lin, Yueh Chin; Chuang, Chuan Lung; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:00:57Z |
AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/GexSi1-x metamorphic buffer layers
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Chang, Edward Yi; Huang, Jui-Chien; Lin, Yueh-Chin; Hsieh, Yen-Chang; Chang, Chia-Yuan |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2019-04-02T05:59:46Z |
High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-m Omega.cm(2) for Power Device Applications
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Wang, Huan-Chung; Lumbantoruan, Franky Juanda; Hsieh, Ting-En; Wu, Chia-Hsun; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:42Z |
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
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Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications
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Yao, Jing-Neng; Lin, Yueh-Chin; Hsu, Heng-Tung; Yang, Kai-Chun; Hsu, Hisang-Hua; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:29Z |
An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications
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Wu, Yun-Chi; Lin, Yueh-Chin; Chang, Edward Yi; Lee, C. T.; Kei, Chi-Chung; Chang, Chia-Ta; Hsu, H. T. |
| 國立交通大學 |
2019-04-02T05:59:28Z |
Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells
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Liao, Shun Sing; Chuang, Chuan Lung; Lin, Yueh Chin; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:51Z |
Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents
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Wu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan |
| 國立交通大學 |
2019-04-02T05:58:40Z |
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
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Chang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:35Z |
Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation
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Wu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:57:08Z |
Performance Improvement of InGaAs FinFET Using NH3 Treatment
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Chang, Edward Yi; Quang-Ho Luc; Huy-Binh Do; Lin, Yueh-Chin |
| 國立交通大學 |
2018-08-21T05:56:49Z |
BUFFER-OPTIMIZED IMPROVEMENT IN RF LOSS OF ALGAN/GAN HEMTS ON 4-INCH SILICON (111)
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Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:54:21Z |
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
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Lin, Yueh Chin; Huang, Yu Xiang; Huang, Gung Ning; Wu, Chia Hsun; Yao, Jing Neng; Chu, Chung Ming; Chang, Shane; Hsu, Chia Chieh; Lee, Jin Hwa; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:17Z |
RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interface
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Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Weng, You-Chen; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:54:09Z |
Reliability improvement in GaN HEMT power device using a field plate approach
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Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2018-08-21T05:53:59Z |
Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application
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Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Tuan Anh Nguyen; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:54Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
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Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:49Z |
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
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Wu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:24Z |
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
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Luc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications
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Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
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Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:52:47Z |
Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
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Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi |
| 國立交通大學 |
2018-06-21 |
Halbleitervorrichtung und Verfahren zur Herstellung derselben
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Hsieh, Ting-En; Lin, Yueh-Chin; Han, Ping-Cheng; Wu, Chia-Hsun; Huang, Chung-Kai; Liu, Shih-Chien; Chang, Edward Yi; HSIEH TING-EN; LIN YUEH-CHIN; HAN PING-CHENG; WU CHIA-HSUN; HUANG CHUNG-KAI; LIU SHIH-CHIEN; CHANG EDWARD YI |
| 國立交通大學 |
2017-04-21T06:56:27Z |
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As
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Do, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:56Z |
Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
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Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
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Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:38Z |
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
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Quang Ho Luc; Cheng, Shou Po; Chang, Po Chun; Huy Binh Do; Chen, Jin Han; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:20Z |
High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
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Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Liu, Shin Chien; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:20Z |
Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment
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Hsiao, Chih-Jen; Minh-Thien-Huu Ha; Hsu, Ching-Yi; Lin, Yueh-Chin; Chang, Sheng-Po; Chang, Shoou-Jinn; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:20Z |
Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Liu, Shih-Chien; Lin, Yen-Ku; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:19Z |
Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
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Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:50Z |
An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure
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Yao, Jing-Neng; Lin, Yueh-Chin; Chuang, Yu-Lin; Huang, Yu-Xiang; Shih, Wang-Cheng; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:42Z |
In-x Ga1-x As Materials for Post CMOS Application: Materials and Device Aspects
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Chang, Edward Yi; Lin, Yueh-Chin; Luc, Quang-Ho; Trinh, Hai-Dang; Yao, Jing-Neng; Chang, Po-Chun |
| 國立交通大學 |
2017-04-21T06:49:23Z |
The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates
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Hsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:48:56Z |
STUDY ON THE ELECTRICAL CHARACTERISTICS OF IN SITU PEALD-PASSIVATED HFO2/IN(0.53)GA(0.47)AS MOSCAP AND MOSFET STRUCTURES
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Luc, Quang-Ho; Chang, Po-Chun; Do, Huy-Binh; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:48:55Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
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Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立成功大學 |
2016-09 |
Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment
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Hsiao, Chih-Jen;Ha, Minh-Thien-Huu;Hsu, Ching-Yi;Lin, Yueh-Chin;Chang, Sheng-Po;Chang, Shoou-Jinn;Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:17Z |
Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor
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Wu, Wen-Hao; Lin, Yueh-Chin; Hou, Tzu-Ching; Lin, Tai-Wei; Hsu, Hisang-Hua; Wong, Yuen-Yee; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
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