| 國立交通大學 |
2015-07-21T08:31:14Z |
Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor
|
Shrestha, Niraj Man; Lin, Yueh-Chin; Chang, Han-Tung; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2014-12-16T06:15:18Z |
ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
|
CHANG EDWARD YI; CHANG CHIA-HUA; LIN YUEH-CHIN |
| 國立交通大學 |
2014-12-16T06:15:17Z |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
|
CHANG Edward Yi; LIN Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:15Z |
Dielectric structure, transistor and manufacturing method thereof
|
Chang Edward-Yi; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:13Z |
METHOD FOR FABRICATING A GaN-BASED THIN FILM TRANSISTOR
|
Chang Yi; Chang Chia-Hua; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:05Z |
ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
|
CHANG EDWARD YI; Chang Chia-Hua; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:03Z |
Semiconductor Device
|
CHANG Yi; CHANG Chia-Hua; LIN Yueh-Chin; CHEN Yu-Kong; SHIE Ting-En |
| 國立交通大學 |
2014-12-16T06:15:01Z |
STRUCTURE OF HIGH ELECTRON MOBILITY TRANSISTOR GROWTH ON SI SUBSTRATE AND THE METHOD THEREOF
|
YI CHANG Edward; Tang Shih-Hsuan; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:14:59Z |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
|
CHANG Edward Yi; LIN Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:14:58Z |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
|
Chang Edward Yi.; Lin Yueh-Chin; Chang Chia-Hua; Trinh Hai-Dang |
| 國立交通大學 |
2014-12-16T06:14:57Z |
HIGH ELECTRON MOBILITY GaN-BASED TRANSISTOR STRUCTURE
|
CHANG EDWARD YI; CHANG CHIA-HUA; LIN YUEH-CHIN; CHEN YU KONG; LIU SHIH-CHIEN |
| 國立交通大學 |
2014-12-16T06:14:48Z |
Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure
|
LIN Yueh-Chin; CHANG Edward Yi; CHUANG Ting-Wei |
| 國立交通大學 |
2014-12-16T06:14:43Z |
Enhanced GaN Transistor and the Forming Method Thereof
|
CHANG Yi; LIN Yueh-Chin; WANG Huan-Chung |
| 國立交通大學 |
2014-12-16T06:14:02Z |
Method for forming T-shaped gate structure
|
Chang Edward Yi; Huang Lu-Che; Chang Chia-Hua; Lin Yueh-Chin; Chieng Wei-Hua; Liu Shih-Chien |
| 國立交通大學 |
2014-12-16T06:14:02Z |
Method for fabricating a GaN-based thin film transistor
|
Chang Yi; Chang Chia-Hua; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:13:59Z |
III-V metal-oxide-semiconductor device
|
Chang Edward Yi; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:13:50Z |
Semiconductor device
|
Chang Yi; Chang Chia-Hua; Lin Yueh-Chin; Chen Yu-Kong; Shie Ting-En |
| 國立交通大學 |
2014-12-16T06:13:49Z |
Structure of high electron mobility transistor growth on Si substrate and the method thereof
|
Yi Chang Edward; Tang Shih-Hsuan; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:47:56Z |
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs
|
Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh |
| 國立交通大學 |
2014-12-08T15:42:39Z |
Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures
|
Wu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Hsu, Li-Han |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
|
Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei |
| 國立交通大學 |
2014-12-08T15:36:57Z |
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
|
Liu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:45Z |
Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
|
Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
|
Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:26Z |
The Materials Integration of Ge and InxGa1-xAs on Si Template for Next Generation CMOS Applications
|
Chang, Edward Yi; Tang, Shih-Hsuan; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
|
Quang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:36:09Z |
Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application
|
Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:08Z |
Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate
|
Lin, Yueh-Chin; Huang, Mao-Lin; Chen, Chen-Yu; Chen, Meng-Ku; Lin, Hung-Ta; Tsai, Pang-Yan; Lin, Chun-Hsiung; Chang, Hui-Cheng; Lee, Tze-Liang; Lo, Chia-Chiung; Jang, Syun-Ming; Diaz, Carlos H.; Hwang, He-Yong; Sun, Yuan-Chen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:35:18Z |
Studying of InSb MOS Capacitors for Post CMOS Application
|
Chang, Edward Yi; Hai-Dang Trinh; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:35:14Z |
Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance
|
Chiu, Yu-Sheng; Lin, Tai-Ming; Nguyen, Hong-Quan; Weng, Yu-Chen; Nguyen, Chi-Lang; Lin, Yueh-Chin; Yu, Hung-Wei; Chang, Edward Yi; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:33:04Z |
Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application
|
Lin, Yueh-Chin; Chang, Chih-Hsiang; Li, Fang-Ming; Hsu, Li-Han; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:33:03Z |
Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density
|
Hai-Dang Trinh; Lin, Yueh-Chin; Minh-Thuy Nguyen; Hong-Quan Nguyen; Quoc-Van Duong; Quang-Ho Luc; Wang, Shin-Yuan; Manh-Nghia Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:32:15Z |
Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
|
Lin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:31:26Z |
Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
|
Hai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:31:04Z |
Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
|
Trinh, Hai-Dang; Lin, Yueh-Chin; Kuo, Chien-I; Chang, Edward Yi; Hong-Quan Nguyen; Wong, Yuen-Yee; Yu, Chih-Chieh; Chen, Chi-Ming; Chang, Chia-Yuan; Wu, Jyun-Yi; Chiu, Han-Chin; Yu, Terrence; Chang, Hui-Cheng; Tsai, Joseph; Hwang, David |
| 國立交通大學 |
2014-12-08T15:30:40Z |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
|
Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
|
Wong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:29:06Z |
Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
|
Chang, Chia-Hua; Shie, Tin-En; Lin, Yueh-Chin; Kakushima, K.; Iwai, H.; Lu, Po-Ching; Lin, Ting-Chun; Huang, Guan Ning; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:07Z |
Study of La2O3/HfO2 Gate Dielectric for n-InAs Metal-Oxide-Semiconductor Capacitor
|
Lin, Yueh-Chin; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Shie, Tin-En; Huang, Guan-Ning; Lu, Po-Ching; Lin, Ting-Chun; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:25:19Z |
On the doping effects for linearity improvement of InGaP/InGaAs PHEMT
|
Lin, Yueh-Chin; Chang, J. W.; Chang, Edward Yi; Chang, X. Y. |
| 國立交通大學 |
2014-12-08T15:24:17Z |
Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs
|
Chen, Shih-Hung; Lin, Yueh-Chin; Linten, Dimitri; Scholz, Mirko; Hellings, Geert; Chang, Edward Yi; Groeseneken, Guido |
| 國立交通大學 |
2014-12-08T15:23:37Z |
Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
|
Lin, Yueh-Chin; Kuo, Tza-Yao; Chuang, Yu-Lin; Wu, Chien-Hua; Chang, Chia-Hua; Huang, Kuan-Ning; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:22:04Z |
Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
|
Trinh, Hai-Dang; Lin, Yueh-Chin; Wang, Huan-Chung; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Kawanago, Takamasa; Lin, Yan-Gu; Chen, Chi-Ming; Wong, Yuen-Yee; Huang, Guan-Ning; Hudait, Mantu; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:21:53Z |
Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz
|
Hsu, Li-Han; Oh, Chee-Way; Wu, Wei-Cheng; Chang, Edward Yi; Zirath, Herbert; Wang, Chin-Te; Tsai, Szu-Ping; Lim, Wee-Chin; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:13:42Z |
A delta-doped InGaP/InGaAs pHEMT with different doping profiles for device-linearity improvement
|
Lin, Yueh-Chin; Chang, Edward Yi; Yamaguchi, Hiroshi; Wu, Wei-Cheng; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:10:58Z |
AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/Ge(x)Si(1-x) metamorphic buffer layers
|
Chang, Edward Yi; Huang, Jui-Chien; Lin, Yueh-Chin; Hsieh, Yen-Chang; Chang, Chia-Yuan |
| 國立交通大學 |
2014-12-08T15:07:59Z |
A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications
|
Huang, Jui-Chien; Lin, Yueh-Chin; Tseng, Yu-Ling; Chen, Ke-Shian; Lu, Po-Chin; Lin, Mong-E; Chang, Edward-Yi |
| 國立交通大學 |
2014-12-08T15:07:53Z |
An Al(2)O(3) AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications
|
Wu, Yun-Chi; Lin, Yueh-Chin; Chang, Edward Yi; Lee, C. T.; Kei, Chi-Chung; Chang, Chia-Ta; Hsu, H. T. |
| 國立交通大學 |
2014-12-08T15:07:38Z |
Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contents
|
Wu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan |
