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"lin yueh chin"的相关文件
显示项目 71-80 / 108 (共11页) << < 2 3 4 5 6 7 8 9 10 11 > >> 每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-16T06:13:59Z |
III-V metal-oxide-semiconductor device
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Chang Edward Yi; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:13:50Z |
Semiconductor device
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Chang Yi; Chang Chia-Hua; Lin Yueh-Chin; Chen Yu-Kong; Shie Ting-En |
| 國立交通大學 |
2014-12-16T06:13:49Z |
Structure of high electron mobility transistor growth on Si substrate and the method thereof
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Yi Chang Edward; Tang Shih-Hsuan; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:47:56Z |
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs
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Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh |
| 國立交通大學 |
2014-12-08T15:42:39Z |
Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures
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Wu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Hsu, Li-Han |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
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Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
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Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei |
| 國立交通大學 |
2014-12-08T15:36:57Z |
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
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Liu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:45Z |
Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
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Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
显示项目 71-80 / 108 (共11页) << < 2 3 4 5 6 7 8 9 10 11 > >> 每页显示[10|25|50]项目
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