|
"lin yueh chin"的相關文件
顯示項目 76-85 / 108 (共11頁)
<< < 2 3 4 5 6 7 8 9 10 11 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
|
Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei |
| 國立交通大學 |
2014-12-08T15:36:57Z |
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
|
Liu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:45Z |
Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
|
Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
|
Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:26Z |
The Materials Integration of Ge and InxGa1-xAs on Si Template for Next Generation CMOS Applications
|
Chang, Edward Yi; Tang, Shih-Hsuan; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
|
Quang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:36:09Z |
Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application
|
Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:08Z |
Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate
|
Lin, Yueh-Chin; Huang, Mao-Lin; Chen, Chen-Yu; Chen, Meng-Ku; Lin, Hung-Ta; Tsai, Pang-Yan; Lin, Chun-Hsiung; Chang, Hui-Cheng; Lee, Tze-Liang; Lo, Chia-Chiung; Jang, Syun-Ming; Diaz, Carlos H.; Hwang, He-Yong; Sun, Yuan-Chen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:35:18Z |
Studying of InSb MOS Capacitors for Post CMOS Application
|
Chang, Edward Yi; Hai-Dang Trinh; Lin, Yueh-Chin |
顯示項目 76-85 / 108 (共11頁)
<< < 2 3 4 5 6 7 8 9 10 11 > >>
每頁顯示[10|25|50]項目
|
