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机构 日期 题名 作者
國立成功大學 2013-06 Improved Light Extraction Efficiency of a High-Power GaN-Based Light-Emitting Diode With a Three-Dimensional-Photonic Crystal (3-D-PhC) Backside Reflector Chang, Yu-Chih; Liou, Jian-Kai; Liu, Wen-Chau
國立成功大學 2013-05 Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience Hsu, Chi-Shiang; Chen, Huey-Ing; Chou, Po-Cheng; Liou, Jian-Kai; Chen, Chun-Chia; Chang, Chung-Fu; Liu, Wen-Chau
國立成功大學 2012-06 On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor Huang, Chien-Chang; Chen, Huey-Ing; Chen, Tai-You; Hsu, Chi-Shiang; Chen, Chun-Chia; Chou, Po-Cheng; Liou, Jian-Kai; Liu, Wen-Chau
國立成功大學 2012-02 On a GaN-Based Light-Emitting Diode With an Aluminum Metal Mirror Deposited on Naturally-Textured V-Shaped Pits Grown on the p-GaN Surface Liou, Jian-Kai; Liu, Yi-Jung; Chen, Chiun-Chia; Chou, Po-Cheng; Hsu, Wei-Chou; Liu, Wen-Chau
國立成功大學 2012 Characteristics of a Pd/AlGaN/GaN Transistor Processed Using the Sensitization, Activation, and Electroless Plating (EP) Approaches Huang, Chien-Chang; Chen, Huey-Ing; Chen, Tai-You; Hsu, Chi-Shiang; Chen, Chun-Chia; Chou, Po-Cheng; Liou, Jian-Kai; Liu, Wen-Chau
國立成功大學 2011-12 Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction Liu, Yi-Jung; Guo, Der-Feng; Chu, Kuei-Yi; Cheng, Shiou-Ying; Liou, Jian-Kai; Chen, Li-Yang; Tsai, Tsung-Han; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shian; Tsai, Tsung-Yuan; Liu, Wen-Chau
國立成功大學 2011-07-18 Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Liou, Jian-Kai; Tsai, Tsung-Yuan; Liu, Wen-Chau
國立成功大學 2011-06 Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Liou, Jian-Kai; Liu, Wen-Chau

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