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"liu c w"的相关文件
显示项目 106-115 / 1255 (共126页)
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每页显示[10|25|50]项目
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness
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Huang Y.-S;Tsou Y.-J;Huang C.-H;Huang C.-H;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
Indication of band flattening at the Fermi level in a strongly correlated electron system
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Melnikov M.Y;Shashkin A.A;Dolgopolov V.T;Huang S.-H;Liu C.W;Kravchenko S.V.; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack
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Huang C.-H;Huang Y.-S;Chang D.-Z;Lin T.-Y;Liu C.W.; Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise
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Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching
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Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V
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Tu C.-T;Huang Y.-S;Lu F.-L;Liu H.-H;Lin C.-Y;Liu Y.-C;Liu C.W.; Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08
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Galluccio E;Petkov N;Mirabelli G;Doherty J;Lin S.-Y;Lu F.-L;Liu C.W;Holmes J.D;Duffy R.; Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping
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Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Energy preference of uniform polarization switching for HfO2 by first-principle study
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Chen Y.-W;Fan S.-T;Liu C.W.; Chen Y.-W; Fan S.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Ferroelectric Al:HfO2 negative capacitance FETs
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Lee M.H;Chen P.-G;Fan S.-T;Chou Y.-C;Kuo C.-Y;Tang C.-H;Chen H.-H;Gu S.-S;Hong R.-C;Wang Z.-Y;Chen S.-Y;Liao C.-Y;Chen K.-T;Chang S.T;Liao M.-H;Li K.-S;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
显示项目 106-115 / 1255 (共126页)
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每页显示[10|25|50]项目
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