臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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显示项目 111-120 / 1255 (共126页)
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机构	日期	题名	作者
臺大學術典藏	2021-09-02T00:03:54Z	First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V	Tu C.-T;Huang Y.-S;Lu F.-L;Liu H.-H;Lin C.-Y;Liu Y.-C;Liu C.W.; Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:54Z	Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08	Galluccio E;Petkov N;Mirabelli G;Doherty J;Lin S.-Y;Lu F.-L;Liu C.W;Holmes J.D;Duffy R.; Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:53Z	First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping	Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:52Z	Energy preference of uniform polarization switching for HfO2 by first-principle study	Chen Y.-W;Fan S.-T;Liu C.W.; Chen Y.-W; Fan S.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:52Z	Ferroelectric Al:HfO2 negative capacitance FETs	Lee M.H;Chen P.-G;Fan S.-T;Chou Y.-C;Kuo C.-Y;Tang C.-H;Chen H.-H;Gu S.-S;Hong R.-C;Wang Z.-Y;Chen S.-Y;Liao C.-Y;Chen K.-T;Chang S.T;Liao M.-H;Li K.-S;Liu C.W.; Lee M.H; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:03:52Z	Effective g factor of low-density two-dimensional holes in a Ge quantum well	Lu T.M;Harris C.T;Huang S.-H;Chuang Y;Li J.-Y;Liu C.W.; Lu T.M; Harris C.T; Huang S.-H; Chuang Y; Li J.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Comprehensive thermal SPICE modeling of FinFETs and BEOL with layout flexibility considering frequency dependent thermal time constant, 3D heat flows, boundary/alloy scattering, and interfacial thermal resistance with circuit level reliability evaluation	Yan J.-Y;Chung C.-C;Jan S.-R;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Yan J.-Y; Chung C.-C; Jan S.-R; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system	Lu T.M;Tracy L.A;Laroche D;Huang S.-H;Chuang Y;Su Y.-H;Li J.-Y;Liu C.W.; Lu T.M; Tracy L.A; Laroche D; Huang S.-H; Chuang Y; Su Y.-H; Li J.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors	Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications	Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU

显示项目 111-120 / 1255 (共126页)
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