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"liu c w"的相關文件
顯示項目 571-580 / 1255 (共126頁)
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| 臺大學術典藏 |
2018-09-10T09:22:34Z |
LDMOS transistor high-frequency performance enhancements by strain
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Chen, K.-M.; Huang, G.-W.; Chen, B.-Y.; Chiu, C.-S.; Hsiao, C.-H.; Liao, W.-S.; Chen, M.-Y.; Yang, Y.-C.; Wang, K.-L.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ?43, ?2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response
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Chang, H.-C.; Chen, Y.-T.; Wong, I.-H.; Lan, H.-S.; Luo, S.-J.; Lin, J.-Y.; Tseng, Y.-J.; Liu, C.W.; Hu, C.; Yang, F.-L.; Lin, C.-M.; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (100) epilayers
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Talwar, D.N.; Feng, Z.C.; Liu, C.W.; Tin, C.-C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Hybrid CIS/Si near-IR sensor and 16% PV energy-harvesting technology
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Shen, C.-H.; CHEE-WEE LIU et al.; Shieh, J.-M.; Wu, T.-T.; Chiou, U.-P.; Kuo, H.-C.; Yu, P.; Lu, T.-C.; Chueh, Y.-L.; Liu, C.-W.; Hu, C.; Yang, F.-L. |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Germanium gate-all-around pFETs on SOI
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Chang, H.-C.; Hsu, S.-H.; Chu, C.-L.; Chen, Y.-T.; Tu, W.-H.; Sung, P.-J.; Luo, G.-Li.; Yin, Y.-C.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors
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Lu, T.M.; Pan, W.; Tsui, D.C.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO 2 interface
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Chang, H.-C.; Lu, S.-C.; Chou, T.-P.; Lin, C.-M.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
A transition of three to two dimensional Si growth on Ge (100) substrate
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Lin, B.-H.; Hsu, C.-H.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU; Tu, W.-H.; Lee, C.-H.; Chang, H.T. |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
A compact analytic model of the strain field induced by through silicon vias
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Jan, S.-R.;Chou, T.-P.;Yeh, C.-Y.;Liu, C.W.;Goldstein, R.V.;Gorodtsov, V.A.;Shushpannikov, P.S.; Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:33Z |
Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I on and nearly defect-free channels
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Chang, H.-C.; Chu, C.-L.; Chen, Y.-T.; Tu, W.-H.; Hou, F.J.; Lo, C.H.; Sung, P.-J.; Chen, B.-Y.; Huang, G.-W.; Luo, G.-L.; Liu, C.W.; Hu, C.; Yang, F.-L.; Hsu, S.-H.; CHEE-WEE LIUet al. |
顯示項目 571-580 / 1255 (共126頁)
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