| 臺大學術典藏 |
2022-01-12T07:07:07Z |
Clinical implications of sequential MRD monitoring by NGS at 2 time points after chemotherapy in patients with AML
|
Tsai C.-H.; Tang J.-L.; Tien F.-M.; Kuo Y.-Y.; Wu D.-C.; Lin C.-C.; Tseng M.-H.; Peng Y.-L.; Hou M.-F.; Chuang Y.-K.; Liu M.-C.; Liu C.-W.; Yao M.; Lin L.-I.; Chou W.-C.; Chen C.-Y.; HSIN-AN HOU; Tien H.-F. |
| 國立成功大學 |
2022 |
A Novel 3D Culture Scaffold to Shorten Development Time for Multicellular Tumor Spheroids
|
Yang, C.-R.;Liang, C.-T.;Tsai, S.-C.;Wu, Y.-C.;Liu, C.-W.;Yang, H.-H.;Tu, Tu T.-Y.;Lee, Y.-C.;Hsiao, K.-Y.;Chang, W.-C.;Ma, W.-L. |
| 臺大學術典藏 |
2021-11-30T04:53:51Z |
Indoxyl sulfate enhances IL-1β-induced E-selectin expression in endothelial cells in acute kidney injury by the ROS/MAPKs/NFκB/AP-1 pathway
|
Shen W.-C.; Liang C.-J.; Huang T.-M.; Liu C.-W.; Wang S.-H.; Young G.-H.; Tsai J.-S.; Tseng Y.-C.; Peng Y.-S.; VIN-CENT WU; Chen Y.-L. |
| 臺大學術典藏 |
2021-11-18T04:57:53Z |
Histone methyltransferase G9a drives chemotherapy resistance by regulating the glutamate�Vcysteine ligase catalytic subunit in head and neck squamous cell carcinoma
|
Liu C.-W; Hua K.-T; Li K.-C; Kao H.-F; Hong R.-L; JENG-YUH KO; Hsiao M; Kuo M.-L; Tan C.-T. |
| 臺大學術典藏 |
2021-11-15T07:48:14Z |
Histone methyltransferase G9a drives chemotherapy resistance by regulating the glutamate�Vcysteine ligase catalytic subunit in head and neck squamous cell carcinoma
|
Liu C.-W; Hua K.-T; Li K.-C; Kao H.-F; Hong R.-L; JENG-YUH KO; Hsiao M; Kuo M.-L; Tan C.-T. |
| 臺大學術典藏 |
2021-10-25T02:57:14Z |
Histone methyltransferase G9a drives chemotherapy resistance by regulating the glutamate�Vcysteine ligase catalytic subunit in head and neck squamous cell carcinoma
|
Liu C.-W; |Hua K.-T; |Li K.-C; |Kao H.-F; |Hong R.-L; |JENG-YUH KO; |Hsiao M; |Kuo M.-L; |Tan C.-T. |
| 臺大學術典藏 |
2021-09-02T00:04:26Z |
Swarm-based mean-variance mapping optimization for optimal placement of energy storage with synthetic inertia control on a low inertia power grid
|
Rahman F.S;Israjuddin, Hariyanto N;Liu C.-W.; Rahman F.S; Israjuddin, Hariyanto N; Liu C.-W.; CHIH-WEN LIU |
| 臺大學術典藏 |
2021-09-02T00:04:12Z |
Surface plasmon resonance behaviors of a highly Ga-doped ZnO nano-grating structure
|
Yao Y.-F;Li T.-P;Cheng Y.-C;Chang W.-Y;Tu C.-G;Chen C.-C;Wang Y.-T;Tse W.F;Liu C.-W;Kuo Y;Kiang Y.-W;Yang C.C.; Yao Y.-F; CHIH-CHUNG YANG et al. |
| 臺大學術典藏 |
2021-09-02T00:04:10Z |
Film Thickness Dependence of Surface Plasmon Resonance Behavior at a Grating Structure of Highly Ga-Doped ZnO
|
Liu C.-W;Chen C.-C;Cheng Y.-C;Chen P.-Y;Chang W.-Y;Kuo Y;Kiang Y.-W;Yang C.-C.; Liu C.-W; Chen C.-C; Cheng Y.-C; Chen P.-Y; Chang W.-Y; Kuo Y; Kiang Y.-W; Yang C.-C.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2021-09-02T00:04:02Z |
Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method
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Tsou Y.-J;Chiu J.-C;Shih H.-C;Liu C.W.; Tsou Y.-J; Chiu J.-C; Shih H.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch
|
Tu C.-T;Huang Y.-S;Cheng C.-Y;Tsai C.-E;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
|
Melnikov M.Y;Dolgopolov V.T;Shashkin A.A;Huang S.-H;Liu C.W;Kravchenko S.V.; Melnikov M.Y; Dolgopolov V.T; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
|
Dolgopolov V.T;Melnikov M.Y;Shashkin A.A;Huang S.-H;Liu C.W;Kravchenko S.V.; Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process
|
Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Record Low Contact Resistivity to Ge:B (8.1*10-10Omega-cm-2) and GeSn:B (4.1*10-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping
|
Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs
|
Chung C.-C;Ye H.-Y;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Chung C.-C; Ye H.-Y; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys
|
Lan H.-S;Chang S.T;Liu C.W.; Lan H.-S; Chang S.T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure
|
Liu X;Lu T.-M;Harris C.T;Lu F.-L;Liu C.-Y;Li J.-Y;Liu C.W;Du R.-R.; Liu X; Lu T.-M; Harris C.T; Lu F.-L; Liu C.-Y; Li J.-Y; Liu C.W; Du R.-R.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:59Z |
Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
|
Huang Y.-S;Huang C.-H;Lu F.-L;Lin C.-Y;Ye H.-Y;Wong I.-H;Jan S.-R;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:59Z |
Process simulation of pulsed laser annealing on epitaxial Ge on Si
|
Lu C.-T;Lu F.-L;Tsai C.-E;Huang W.-H;Liu C.W.; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures
|
Tai A.-H;Yen C.-C;Chen T.-L;Chou C.-H;Liu C.W.; Tai A.-H; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels
|
Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors
|
Yen C.-C;Tai A.-H;Liu Y.-C;Chen T.-L;Chou C.-H;Liu C.W.; Yen C.-C; Tai A.-H; Liu Y.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
|
Lee M.H;Chen P.-G;Fan S.-T;Kuo C.-Y;Chen H.-H;Gu S.-S;Chou Y.-C;Tang C.-H;Hong R.-C;Wang Z.-Y;Liao M.-H;Li K.-S;Chen M.-C;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Metallic state in a strongly interacting spinless two-valley electron system in two dimensions
|
Melnikov M.Y;Shashkin A.A;Dolgopolov V.T;Huang S.-H;Liu C.W;Zhu A.Y.X;Kravchenko S.V.; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Zhu A.Y.X; Kravchenko S.V.; CHEE-WEE LIU |
