| 臺大學術典藏 |
2021-10-25T02:57:14Z |
Histone methyltransferase G9a drives chemotherapy resistance by regulating the glutamate�Vcysteine ligase catalytic subunit in head and neck squamous cell carcinoma
|
Liu C.-W; |Hua K.-T; |Li K.-C; |Kao H.-F; |Hong R.-L; |JENG-YUH KO; |Hsiao M; |Kuo M.-L; |Tan C.-T. |
| 臺大學術典藏 |
2021-09-02T00:04:26Z |
Swarm-based mean-variance mapping optimization for optimal placement of energy storage with synthetic inertia control on a low inertia power grid
|
Rahman F.S;Israjuddin, Hariyanto N;Liu C.-W.; Rahman F.S; Israjuddin, Hariyanto N; Liu C.-W.; CHIH-WEN LIU |
| 臺大學術典藏 |
2021-09-02T00:04:12Z |
Surface plasmon resonance behaviors of a highly Ga-doped ZnO nano-grating structure
|
Yao Y.-F;Li T.-P;Cheng Y.-C;Chang W.-Y;Tu C.-G;Chen C.-C;Wang Y.-T;Tse W.F;Liu C.-W;Kuo Y;Kiang Y.-W;Yang C.C.; Yao Y.-F; CHIH-CHUNG YANG et al. |
| 臺大學術典藏 |
2021-09-02T00:04:10Z |
Film Thickness Dependence of Surface Plasmon Resonance Behavior at a Grating Structure of Highly Ga-Doped ZnO
|
Liu C.-W;Chen C.-C;Cheng Y.-C;Chen P.-Y;Chang W.-Y;Kuo Y;Kiang Y.-W;Yang C.-C.; Liu C.-W; Chen C.-C; Cheng Y.-C; Chen P.-Y; Chang W.-Y; Kuo Y; Kiang Y.-W; Yang C.-C.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2021-09-02T00:04:02Z |
Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method
|
Tsou Y.-J;Chiu J.-C;Shih H.-C;Liu C.W.; Tsou Y.-J; Chiu J.-C; Shih H.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch
|
Tu C.-T;Huang Y.-S;Cheng C.-Y;Tsai C.-E;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
|
Melnikov M.Y;Dolgopolov V.T;Shashkin A.A;Huang S.-H;Liu C.W;Kravchenko S.V.; Melnikov M.Y; Dolgopolov V.T; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
|
Dolgopolov V.T;Melnikov M.Y;Shashkin A.A;Huang S.-H;Liu C.W;Kravchenko S.V.; Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process
|
Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Record Low Contact Resistivity to Ge:B (8.1*10-10Omega-cm-2) and GeSn:B (4.1*10-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping
|
Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs
|
Chung C.-C;Ye H.-Y;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Chung C.-C; Ye H.-Y; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys
|
Lan H.-S;Chang S.T;Liu C.W.; Lan H.-S; Chang S.T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure
|
Liu X;Lu T.-M;Harris C.T;Lu F.-L;Liu C.-Y;Li J.-Y;Liu C.W;Du R.-R.; Liu X; Lu T.-M; Harris C.T; Lu F.-L; Liu C.-Y; Li J.-Y; Liu C.W; Du R.-R.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:59Z |
Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
|
Huang Y.-S;Huang C.-H;Lu F.-L;Lin C.-Y;Ye H.-Y;Wong I.-H;Jan S.-R;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:59Z |
Process simulation of pulsed laser annealing on epitaxial Ge on Si
|
Lu C.-T;Lu F.-L;Tsai C.-E;Huang W.-H;Liu C.W.; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures
|
Tai A.-H;Yen C.-C;Chen T.-L;Chou C.-H;Liu C.W.; Tai A.-H; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels
|
Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors
|
Yen C.-C;Tai A.-H;Liu Y.-C;Chen T.-L;Chou C.-H;Liu C.W.; Yen C.-C; Tai A.-H; Liu Y.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
|
Lee M.H;Chen P.-G;Fan S.-T;Kuo C.-Y;Chen H.-H;Gu S.-S;Chou Y.-C;Tang C.-H;Hong R.-C;Wang Z.-Y;Liao M.-H;Li K.-S;Chen M.-C;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Metallic state in a strongly interacting spinless two-valley electron system in two dimensions
|
Melnikov M.Y;Shashkin A.A;Dolgopolov V.T;Huang S.-H;Liu C.W;Zhu A.Y.X;Kravchenko S.V.; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Zhu A.Y.X; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers
|
Yen C.-C;Tai A.-H;Liu Y.-C;Yeh C.-H;Liu C.W.; Yen C.-C; Tai A.-H; Liu Y.-C; Yeh C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence
|
Ye H.-Y;Chung C.-C;Liu C.W.; Ye H.-Y; Chung C.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence
|
Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:56Z |
Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry
|
Chung C.-C;Lin H.-C;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Chung C.-C; Lin H.-C; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields
|
Dolgopolov V.T;Melnikov M.Y;Shashkin A.A;Huang S.-H;Liu C.W;Kravchenko S.V.; Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness
|
Huang Y.-S;Tsou Y.-J;Huang C.-H;Huang C.-H;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
Indication of band flattening at the Fermi level in a strongly correlated electron system
|
Melnikov M.Y;Shashkin A.A;Dolgopolov V.T;Huang S.-H;Liu C.W;Kravchenko S.V.; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack
|
Huang C.-H;Huang Y.-S;Chang D.-Z;Lin T.-Y;Liu C.W.; Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise
|
Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching
|
Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V
|
Tu C.-T;Huang Y.-S;Lu F.-L;Liu H.-H;Lin C.-Y;Liu Y.-C;Liu C.W.; Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08
|
Galluccio E;Petkov N;Mirabelli G;Doherty J;Lin S.-Y;Lu F.-L;Liu C.W;Holmes J.D;Duffy R.; Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping
|
Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Energy preference of uniform polarization switching for HfO2 by first-principle study
|
Chen Y.-W;Fan S.-T;Liu C.W.; Chen Y.-W; Fan S.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Ferroelectric Al:HfO2 negative capacitance FETs
|
Lee M.H;Chen P.-G;Fan S.-T;Chou Y.-C;Kuo C.-Y;Tang C.-H;Chen H.-H;Gu S.-S;Hong R.-C;Wang Z.-Y;Chen S.-Y;Liao C.-Y;Chen K.-T;Chang S.T;Liao M.-H;Li K.-S;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Effective g factor of low-density two-dimensional holes in a Ge quantum well
|
Lu T.M;Harris C.T;Huang S.-H;Chuang Y;Li J.-Y;Liu C.W.; Lu T.M; Harris C.T; Huang S.-H; Chuang Y; Li J.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Comprehensive thermal SPICE modeling of FinFETs and BEOL with layout flexibility considering frequency dependent thermal time constant, 3D heat flows, boundary/alloy scattering, and interfacial thermal resistance with circuit level reliability evaluation
|
Yan J.-Y;Chung C.-C;Jan S.-R;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Yan J.-Y; Chung C.-C; Jan S.-R; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
|
Lu T.M;Tracy L.A;Laroche D;Huang S.-H;Chuang Y;Su Y.-H;Li J.-Y;Liu C.W.; Lu T.M; Tracy L.A; Laroche D; Huang S.-H; Chuang Y; Su Y.-H; Li J.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors
|
Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications
|
Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliability
|
Li S.-L;Lee M.-X;Yen C.-C;Chen T.-L;Chou C.-H;Liu C.W.; Li S.-L; Lee M.-X; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Band calculation of lonsdaleite Ge
|
Chen P.-S;Fan S.-T;Lan H.-S;Liu C.W.; Chen P.-S; Fan S.-T; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well
|
Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs
|
Lee M.H;Lin Y.-Y;Yang Y.-J;Hsieh F.-C;Chang S.T;Liao M.-H;Li K.-S;Liu C.W;Chen K.-T;Liao C.-Y;Siang G.-Y;Lo C;Chen H.-Y;Tseng Y.-J;Chueh C.-Y;Chang C.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition
|
Tsai C.-E;Lu F.-L;Chen P.-S;Liu C.W.; Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces
|
Lan H.-S;Liu C.W.; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2
|
Fan S.-T;Chen Y.-W;Chen P.-S;Liu C.W.; Fan S.-T; Chen Y.-W; Chen P.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
|
Bussmann E;Gamble J.K;Koepke J.C;Laroche D;Huang S.H;Chuang Y;Li J.-Y;Liu C.W;Swartzentruber B.S;Lilly M.P;Carroll M.S;Lu T.-M.; Bussmann E; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-08-24T02:10:13Z |
Indoxyl sulfate enhances IL-1β-induced E-selectin expression in endothelial cells in acute kidney injury by the ROS/MAPKs/NFκB/AP-1 pathway
|
Shen W.-C.; Liang C.-J.; TAO-MIN HUANG; Liu C.-W.; Wang S.-H.; Young G.-H.; Tsai J.-S.; Tseng Y.-C.; Peng Y.-S.; Wu V.-C.; Chen Y.-L. |
| 臺大學術典藏 |
2021-08-20T07:10:55Z |
Real-World Experience with Coformulated Ledipasvir and Sofosbuvir for HIV-Positive Patients with HCV Genotype 2 Infection: A Multicenter, Retrospective Study
|
Liou B.-H.; HSIN-YUN SUN; Yang C.-J.; Syue L.-S.; Lee Y.-L.; Tang H.-J.; Tsai H.-C.; Lin C.-Y.; Chen T.-C.; Lee C.-Y.; Huang S.-H.; Liu C.-W.; Lu P.-L.; Lin S.-P.; Wang N.-C.; Cheng A.; Ko W.-C.; Cheng S.-H.; Hung C.-C.; the Taiwan HIV Study Group |
