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机构 日期 题名 作者
國立交通大學 2014-12-08T15:43:16Z Integration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-mu m logic process Lan, JK; Wang, YL; Lo, KY; Liu, CP; Liu, CW; Wang, JK; Cheng, YL; Chau, CG
國立交通大學 2014-12-08T15:40:27Z Mechanisms of circular defects for shallow trench isolation oxide deposition Lan, JK; Wang, YL; Liu, CP; Chao, CG; Ay, CY; Liu, CW; Cheng, YL
國立交通大學 2014-12-08T15:40:06Z The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT
國立交通大學 2014-12-08T15:39:44Z Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS
國立交通大學 2014-12-08T15:39:43Z Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect Chen, KW; Wang, YL; Liu, CP; Yang, K; Chang, L; Lo, KY; Liu, CW
國立交通大學 2014-12-08T15:39:43Z Study on precipitations of fluorine-doped silicon oxide Wu, J; Wang, YL; Liu, CP; Chang, SC; Kuo, CT; Ay, C
國立交通大學 2014-12-08T15:39:43Z Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS
國立交通大學 2014-12-08T15:39:43Z Monitor and eliminate the circular defects in HDP-STI deposition through oxynitride/oxide composite liner Lan, JK; Wang, YL; Liu, CP; Lee, WH; Ay, C; Cheng, YL; Chang, SC
國立交通大學 2014-12-08T15:39:16Z Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS
國立交通大學 2014-12-08T15:38:39Z Direct COSi2 thin-film formation with homogeneous nanograin-size distribution by oxide-mediated silicidation Chang, JJ; Liu, CP; Chen, SW; Chang, CC; Hsieh, TE; Wang, YL

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