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"liu dg"
Showing items 1-27 of 27 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:08Z |
Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductors
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Liu, DG; Lee, CP |
| 國立交通大學 |
2014-12-08T15:45:19Z |
Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon
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Yang, WL; Cheng, CY; Tsai, MS; Liu, DG; Shieh, MS |
| 國立交通大學 |
2014-12-08T15:45:12Z |
Improvement of polysilicon oxide integrity using NF3-annealing
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Yang, WL; Shieh, MS; Chen, YM; Chao, TS; Liu, DG; Lei, TF |
| 國立交通大學 |
2014-12-08T15:44:19Z |
Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodes
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Yang, WL; Wu, WF; Liu, DG; Wu, CC; Ou, KL |
| 國立交通大學 |
2014-12-08T15:05:43Z |
PERIODIC FLUX INTERRUPTION AND SUSTAINED TWO-DIMENSIONAL GROWTH FOR MOLECULAR-BEAM EPITAXY
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LEE, CP; CHANG, KH; LIU, DG; WU, JS |
| 國立交通大學 |
2014-12-08T15:05:34Z |
REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
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WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:27Z |
INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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CHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:27Z |
BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXY
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LIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:26Z |
DELTA-DOPED QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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LIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:25Z |
RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES
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WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:21Z |
IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS
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WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:20Z |
CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS
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WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:19Z |
INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
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WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:18Z |
ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHOD
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LIU, DG; CHIN, TC; LEE, CP; HWANG, HL |
| 國立交通大學 |
2014-12-08T15:05:16Z |
ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS
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WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG |
| 國立交通大學 |
2014-12-08T15:05:12Z |
QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
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WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:06Z |
PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAAS
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CHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; WANG, MH; CHEN, LJ; MARAIS, MA |
| 國立交通大學 |
2014-12-08T15:05:00Z |
A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION
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LIOU, DC; CHIANG, WH; LEE, CP; CHANG, KH; LIU, DG; WU, JS; TU, YK |
| 國立交通大學 |
2014-12-08T15:04:59Z |
HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
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CHANG, KH; WU, JS; LIU, DG; LIOU, DC; LEE, CP |
| 國立交通大學 |
2014-12-08T15:04:54Z |
DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY
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LIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:54Z |
INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
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WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:04:49Z |
PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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LIU, DG; CHANG, KH; LEE, CP; HSU, TM; TIEN, YC |
| 國立交通大學 |
2014-12-08T15:04:49Z |
FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS
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HSU, TM; TIEN, YC; LU, NH; TSAI, SP; LIU, DG; LEE, CP |
| 國立交通大學 |
2014-12-08T15:04:47Z |
INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLS
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TSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; CHANG, Y; FAN, JC; LIU, DG |
| 國立交通大學 |
2014-12-08T15:04:39Z |
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF HEAVILY DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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LIU, DG; FAN, JC; LEE, CP; CHANG, KH; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:01:42Z |
Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure
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Yang, WL; Lin, CJ; Chao, TS; Liu, DG; Lei, TF |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductors
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Liu, DG; Lee, CP |
Showing items 1-27 of 27 (1 Page(s) Totally)
1
View [10|25|50] records per page
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