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Showing items 166-175 of 210  (21 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2018 Al2O3-dielectric In0.18Al0.82N/AlN/GaN/Si metal-oxide-semiconductor heterostructure field-effect transistors with backside substrate metal-trench structure Lee, C.-S.;Hsu, W.-C.;Liu, H.-Y.;Chen, Y.-C.
臺大學術典藏 2017 Seizure risk associated with antidepressant treatment among patients with depressive disorders: A population-based case-crossover study CHI-SHIN WU; Liu H.-Y.; Tsai H.-J.; Liu S.-K.
國立成功大學 2017 Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT Liu, H.-Y.;Lee, C.-S.;Lin, C.-W.;Chiang, M.-H.;Hsu, W.-C.
國立成功大學 2017 Al2O3-passivated graded-barrier AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor by hydrogen peroxide oxidization method Lee, C.-S.;Hsu, W.-C.;Liu, H.-Y.;Yang, S.-T.
國立成功大學 2017 Amorphous TiO2-based thin-film phototransistor Liu, H.-Y.;Huang, R.-C.;Li, Y.-Y.;Lee, C.-S.;Hsu, W.-C.
國立成功大學 2017 Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication Liu, H.-Y.;Lin, C.-W.;Hsu, W.-C.;Lee, C.-S.;Chiang, M.-H.;Sun, W.-C.;Wei, S.-Y.;Yu, S.-M.
國立成功大學 2017 Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique Lee, C.-S.;Hsu, W.-C.;Chiang, B.-J.;Liu, H.-Y.;Lee, H.-Y.
國立成功大學 2017 Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures Lee, C.-S.;Hsu, W.-C.;Liu, H.-Y.;Chen, S.-F.;Chen, Y.-C.;Yang, S.-T.
國立成功大學 2017 Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment Lee, C.-S.;Liu, H.-Y.;Hsu, W.-C.;Chen, S.-F.
國立臺灣大學 2016-06 Complete list of the native orchids of Taiwan and their type information Lin, T.P.; Liu, H.Y.; Hsieh, C.F.; Wang, K.H.

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