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Showing items 1-10 of 87 (9 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:18Z |
Plate-based biochemical assay using quantum dots as a fluorescent labeling agent
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Huang, CP; Liu, HW; Tsao, CY; Yin, LT; Chiu, SF; Chen, TM |
| 國立交通大學 |
2019-04-02T06:00:17Z |
Observing enhanced phosphorescence and electroluminescence from triplet emitter by quantum dot doping
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Laskar, IR; Liu, HW; Huang, CP; Cheng, JA; Chen, TM |
| 國立交通大學 |
2019-04-02T05:59:29Z |
SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS
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CHANG, HC; LIU, HW; SU, HP; HONG, G |
| 國立交通大學 |
2019-04-02T05:59:08Z |
The oxidation mechanism of low-pressure dry oxidation of nitrides for memory devices
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Liu, HW; Su, HP; Lai, WK; Cheng, HC |
| 國立交通大學 |
2019-04-02T05:58:47Z |
Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors
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Liu, HW; Lai, WK; Yu, SY; Huang, SC; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:48:55Z |
A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal
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Lai, WK; Liu, HW; Juang, MH; Chen, NC; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:48:45Z |
Excellent low-pressure-oxidized Si3N4 films on roughened poly-si for high-density DRAM's
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Liu, HW; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:47:36Z |
Effects of CoSi2 on p(+) polysilicon gates fabricated by BF2+ implantation into CoSi amorphous Si bilayers
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Cheng, HC; Lai, WK; Liu, HW; Juang, MH |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Effects of rapid thermal annealing on cobalt silicided p(+) poly-Si gates fabricated by BF2+ implantation into bilayered CoSi/a-Si films
|
Lai, WK; Liu, HW; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:36:23Z |
Observing enhanced phosphorescence and electroluminescence from triplet emitter by quantum dot doping
|
Laskar, IR; Liu, HW; Huang, CP; Cheng, JA; Chen, TM |
Showing items 1-10 of 87 (9 Page(s) Totally)
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