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Institution Date Title Author
國立臺灣大學 1999 Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung
臺大學術典藏 1999 Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung
國立臺灣大學 1998 Very thin layers of TlP grown on InP using gas source molecular beam epitaxy Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung
臺大學術典藏 1998 Very thin layers of TlP grown on InP using gas source molecular beam epitaxy Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung
國立臺灣大學 1996-04 An unified GSMBE growth model for GaInAsP on InP and GaAs Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung
臺大學術典藏 1996-04 An unified GSMBE growth model for GaInAsP on InP and GaAs Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung
國立臺灣大學 1995-05 The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung
臺大學術典藏 1995-05 The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung
國立臺灣大學 1995 The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung
臺大學術典藏 1995 The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung

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