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"liu jin shung"的相關文件
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| 國立臺灣大學 |
1999 |
Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
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Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1999 |
Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
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Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
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Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1998 |
Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
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Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996-04 |
An unified GSMBE growth model for GaInAsP on InP and GaAs
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Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1996-04 |
An unified GSMBE growth model for GaInAsP on InP and GaAs
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Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995-05 |
The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy
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Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995-05 |
The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy
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Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
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Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995 |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
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Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
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