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Institution Date Title Author
國立交通大學 2019-04-02T06:00:11Z Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate Dielectric Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen
國立政治大學 2019 有別於西歐的東亞經驗:臺灣移工政策設計的考察(1980-2016) 劉濬誠; Liu, Jun-Cheng
國立交通大學 2018-01-24T07:42:12Z Revit 於鋼筋混凝土結構建模實例探討 劉俊成; 林昌佑; Liu, Jun-Cheng; Lin, Chang-Yu
國立高雄應用科技大學 2017 磁共振暨磁感應之近場天線設計與實現 劉俊呈; Liu, Jun-Cheng
國立臺灣海洋大學 2017 蛋白質交互作用計算預測方法的成效評估 Liu, Jun-Cheng; 劉峻丞
國立交通大學 2014-12-08T15:12:50Z Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substrates Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Kei, Chi-Chung; Liu, Da-Ren; Hsiao, Chien-Nan; Yang, Chun-Hui; Changa, Chun-Yen
國立交通大學 2014-12-08T15:10:26Z Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Chen, Yi-Cheng; Chang, Yao-Feng; Wang, Shin-Yuan; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen
國立交通大學 2014-12-08T15:09:31Z Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Ling, Yu-Ting; Chang, Ruey-Dar; Kei, Chi-Chung; Hsiao, Chien-Nan; Liu, Jun-Cheng; Chang, Chun-Yen
國立交通大學 2014-12-08T15:09:00Z Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate Dielectric Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen

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