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Institution Date Title Author
國立交通大學 2015-12-02T02:59:20Z Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung
國立交通大學 2015-07-21T08:30:58Z The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs) Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi
國立交通大學 2014-12-12T01:54:59Z 以有機金屬化學氣相沉積成長氮化銦鋁/氮化鋁/氮化鎵異質結構之高電子遷移率電晶體的應用 劉冠昕; Liu, Kuan-Shin; 張翼; 馬哲申; Chang, Edward Yi; Maa, Jer-Shen

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