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Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
臺大學術典藏 |
2021-04-21T23:29:58Z |
First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping
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Huang, Yu Shiang; Tsai, Chung En; Tu, Chien Te; Chen, Jyun Yan; Ye, Hung Yu; Lu, Fang Liang; CHEN-WUING LIU |
臺大學術典藏 |
2021-01-19T12:08:32Z |
Record Low Contact Resistivity to Ge:B (8.1*10-10Omega-cm-2) and GeSn:B (4.1*10-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping
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Lu, Fang Liang; Liu, Yi Chun; Tsai, Chung En; Ye, Hung Yu; CHEN-WUING LIU |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
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