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| 國立交通大學 |
2014-12-08T15:39:14Z |
An endurance evaluation method for flash EEPROM
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Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
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Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:17:37Z |
Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique
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Gu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY |
Showing items 1-3 of 3 (1 Page(s) Totally)
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