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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:18Z |
Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatment
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Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:26Z |
The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode
|
Lu, WT; Lin, PC; Huang, TY; Chien, CH; Yang, MJ; Huang, IJ; Lehnen, P |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stack
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Lu, WT; Chien, CH; Huang, IJ; Yang, MJ; Lehnen, P; Huang, TY |
| 國立交通大學 |
2014-12-08T15:26:36Z |
Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETs
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Lee, DY; Lin, HC; Chiang, WJ; Lu, WT; Huang, GW; Huang, TY; Wang, T |
| 國立交通大學 |
2014-12-08T15:18:06Z |
Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO(2) gate stacks by post deposition N(2)O plasma treatment
|
Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY |
| 國立交通大學 |
2014-12-08T15:16:58Z |
Improved reliability of HfO2/SiON gate stack by fluorine incorporation
|
Lu, WT; Chiein, CH; Lan, WT; Lee, TC; Lehnen, P; Huang, TY |
Showing items 1-6 of 6 (1 Page(s) Totally)
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