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Taiwan Academic Institutional Repository >
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"luc quang ho"
Showing items 1-22 of 22 (1 Page(s) Totally)
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| 元智大學 |
Sep-21 |
E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V-th Stability by Field Plate Engineering
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李清庭; Wu, Jui-Sheng; Lee, Chih-Chieh; Wu, Chia-Hsun; Kao, Min-Lu; Weng, You-Chen; Yang, Chih-Yi; Luc, Quang Ho; Ueda, Daisuke; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
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李清庭; Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2019-09-02T07:46:17Z |
Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device Applications
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Wu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi |
| 國立交通大學 |
2019-04-03T06:43:48Z |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
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Do, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Nguyen, Tuan Anh; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:23Z |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
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Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Lee, Ching Ting; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:15Z |
Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications
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Huynh, Sa Hoang; Ha, Minh Thien Huu; Do, Huy Binh; Nguyen, Tuan Anh; Yu, Hung Wei; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:49Z |
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
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Wu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:24Z |
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
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Luc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications
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Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
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Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:05Z |
Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication
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Wang, Huan-Chung; Su, Huan-Fu; Luc, Quang-Ho; Lee, Ching-Ting; Hsu, Heng-Tung; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:27Z |
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As
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Do, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:17Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:20Z |
Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Liu, Shih-Chien; Lin, Yen-Ku; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:42Z |
In-x Ga1-x As Materials for Post CMOS Application: Materials and Device Aspects
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Chang, Edward Yi; Lin, Yueh-Chin; Luc, Quang-Ho; Trinh, Hai-Dang; Yao, Jing-Neng; Chang, Po-Chun |
| 國立交通大學 |
2017-04-21T06:48:56Z |
STUDY ON THE ELECTRICAL CHARACTERISTICS OF IN SITU PEALD-PASSIVATED HFO2/IN(0.53)GA(0.47)AS MOSCAP AND MOSFET STRUCTURES
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Luc, Quang-Ho; Chang, Po-Chun; Do, Huy-Binh; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:08Z |
Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
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Luc, Quang Ho; Do, Huy Binh; Ha, Minh Thien Huu; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2015-11-26T01:02:47Z |
高介電質與三五族之介面活性層在互補式金屬氧化層半導體之應用
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陸廣湖; Luc, Quang-Ho; 張翼; Chang, Edward-Yi |
| 國立交通大學 |
2014-12-08T15:36:45Z |
Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
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Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung |
Showing items 1-22 of 22 (1 Page(s) Totally)
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