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| 國立交通大學 |
2017-04-21T06:49:32Z |
Reliability Study of MANOS with and without a SiO2 Buffer Layer and BE-MANOS Charge-Trapping NAND Flash Devices
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Liao, Chien-Wei; Lai, Sheng-Chih; Lue, Hang-Ting; Yang, Ming-Jui; Shen, Chin-Yen; Lue, Yi-Hsien; Huang, Yu-Fong; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:56Z |
An oxide-buffered BE-MANOS charge-trapping device and the role of Al2O3
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Huang, Yu-Fong; Yang, Ming-Jui; Lue, Yi-Hsien; Wu, Tai-Bor; Hsieh, Jung-Yu; Wang, Szu-Yu; Hong, Shih-Ping; Hsu, Fang-Hao; Shen, Chih-Yen; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuan-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:54Z |
Highly reliable MA BE-SONOS (Metal-Al2O3 bandgap engineered SONOS) using a SiO2 buffer layer
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Wu, Tai-Bor; Yang, Ming-Jui; Lue, Yi-Hsien; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:07:50Z |
The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure
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Kuo, Po-Yi; Huang, Yan-Syue; Lue, Yi-Hsien; Chao, Tien-Sheng; Lei, Tan-Fu |
Showing items 1-4 of 4 (1 Page(s) Totally)
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