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| 元智大學 |
Nov-18 |
Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD
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李清庭; Lumbantoruan, Franky; Zheng, Xia-Xi; Huang, Jian-Hao; Huang, Ren-Yao); Mangasa, Firman; Chang, Edward-Yi; Tu, Yung-Yi |
| 國立交通大學 |
2019-04-02T06:00:52Z |
Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD
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Lumbantoruan, Franky; Zheng, Xia-Xi; Huang, Jian-Hao; Huang, Ren-Yao; Mangasa, Firman; Chang, Edward-Yi; Tu, Yung-Yi; Lee, Ching-Ting |
| 國立交通大學 |
2018-08-21T05:56:49Z |
BUFFER-OPTIMIZED IMPROVEMENT IN RF LOSS OF ALGAN/GAN HEMTS ON 4-INCH SILICON (111)
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Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:54:17Z |
RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interface
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Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Weng, You-Chen; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi |
| 國立交通大學 |
2018-08-21T05:53:50Z |
Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT
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Lumbantoruan, Franky; Wu, Chia-Hsun; Zheng, Xia-Xi; Singh, Sankalp K.; Dee, Chang-Fu; Majlis, Burhanuddin Y.; Chang, Edward-Yi |
| 國立交通大學 |
2015-07-21T08:30:57Z |
Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD
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Lumbantoruan, Franky; Wong, Yuan-Yee; Wu, Yue-Han; Huang, Wei-Ching; Shrestra, Niraj Man; Luong, Tung Tien; Tran Binh Tinh; Chang, Edward Yi |
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