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Showing items 1-25 of 27 (2 Page(s) Totally)
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| 國立成功大學 |
2022 |
Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors
|
Chu, Chu C.-L.;Luo, G.-L.;Chou, D.;Hsu, S.-H. |
| 國立成功大學 |
2022 |
First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering
|
Yu, X.-R.;Chang, W.-H.;Hong, T.-C.;Sung, P.-J.;Agarwal, Agarwal A.;Luo, G.-L.;Wu, C.-T.;Kao, Kao K.-H.;Su, C.-J.;Chang, S.-W.;Lu, W.-H.;Fu, P.-Y.;Lin, J.-H.;Wu, P.-H.;Cho, T.-C.;Ma, W.C.-Y.;Lu, D.-D.;Chao, T.-S.;Maeda, T.;Lee, Y.-J.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2022 |
Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size
|
Yu, X.-R.;Chuang, M.-H.;Chang, S.-W.;Chang, W.-H.;Hong, T.-C.;Chiang, Chiang C.-H.;Lu, W.-H.;Yang, C.-Y.;Chen, W.-J.;Lin, J.-H.;Wu, P.-H.;Sun, T.-C.;Kola, S.;Yang, Yang Y.-S.;Da, Y.;Sung, P.-J.;Wu, C.-T.;Cho, T.-C.;Luo, G.-L.;Kao, Kao K.-H.;Chiang, M.-H.;Ma, W.C.-Y.;Su, C.-J.;Chao, T.-S.;Maeda, T.;Samukawa, Samukawa S.;Li, Y.;Lee, Y.-J.;Wu, Wu W.-F.;Tarng, J.-H.;Wang, Y.-H. |
| 臺大學術典藏 |
2020-06-11T06:20:29Z |
Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications
|
Wu, C.-T.; Huang, Y.-M.; Hou, F.-J.; Luo, G.-L.; Huang, Y.-C.; Shen, Y.-L.; Ma, W.C.-Y.; Huang, K.-P.; Lin, K.-L.; Samukawa, S.; Li, Y.; Huang, G.-W.; Lee, Y.-J.; Li, J.-Y.; Wu, W.-F.; Shieh, J.-M.; Chao, T.-S.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI; Sung, P.-J.;Chang, C.-Y.;Chen, L.-Y.;Kao, K.-H.;Su, C.-J.;Liao, T.-H.;Fang, C.-C.;Wang, C.-J.;Hong, T.-C.;Jao, C.-Y.;Hsu, H.-S.;Luo, S.-X.;Wang, Y.-S.;Huang, H.-F.;Li, J.-H.;Huang, Y.-C.;Hsueh, F.-K.;Wu, C.-T.;Huang, Y.-M.;Hou, F.-J.;Luo, G.-L.;Huang, Y.-C.;Shen, Y.-L.;Ma, W.C.-Y.;Huang, K.-P.;Lin, K.-L.;Samukawa, S.;Li, Y.;Huang, G.-W.;Lee, Y.-J.;Li, J.-Y.;Wu, W.-F.;Shieh, J.-M.;Chao, T.-S.;Yeh, W.-K.;Wang, Y.-H.; Sung, P.-J.; Hsueh, F.-K.; Huang, Y.-C.; Li, J.-H.; Huang, H.-F.; Chang, C.-Y.; Chen, L.-Y.; Kao, K.-H.; Su, C.-J.; Liao, T.-H.; Fang, C.-C.; Wang, C.-J.; Hong, T.-C.; Jao, C.-Y.; Hsu, H.-S.; Luo, S.-X.; Wang, Y.-S. |
| 臺大學術典藏 |
2020-06-11T06:20:28Z |
High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing
|
Liu, J.-Y.;Chiu, P.-Y.;Chuang, Y.;Liu, C.-Y.;Luo, G.-L.;Li, J.-Y.; Liu, J.-Y.; Chiu, P.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI |
| 臺大學術典藏 |
2020-06-11T06:20:28Z |
A High ION/IOFF Ratio of 6 × 105 in Germanium-Tin n+/p Junctions by Phosphorus Ion Implantation
|
Liu, J.-Y.;Chuang, Y.;Liu, C.-Y.;Luo, G.-L.;Li, J.-Y.; Liu, J.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI |
| 國立交通大學 |
2019-10-05T00:08:42Z |
Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O-3 Treatment
|
Yeh, M. -S.; Luo, G. -L.; Hou, F. -J.; Sung, P. -J.; Wang, C. -J.; Su, C. -J.; Wu, C. -T.; Huang, Y. -C.; Hong, T. -C.; Chao, T. -S.; Chen, B. -Y.; Chen, K. -M.; Wu, Y. -C.; Izawa, M.; Miura, M.; Morimoto, M.; Ishimura, H.; Lee, Y. -J.; Wu, W. -F.; Yeh, W. -K. |
| 國立交通大學 |
2019-04-02T06:04:37Z |
Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications
|
Sung, P. -J.; Chang, C. -Y.; Chen, L. -Y.; Kao, K. -H.; Su, C. -J.; Liao, T. -H.; Fang, C. -C.; Wang, C. -J.; Hong, T. -C.; Jao, C. -Y.; Hsu, H. -S.; Luo, S. -X.; Wang, Y. -S.; Huang, H. -F.; Li, J. -H.; Huang, Y. -C.; Hsueh, F. -K.; Wu, C. -T.; Huang, Y. -M.; Hou, F. -J.; Luo, G. -L.; Shen, Y. -L.; Ma, W. C. -Y.; Huang, K. -P.; Lin, K. -L.; Samukawa, S.; Li, Y.; Huang, G. -W; Lee, Y. -J.; Li, J. -Y.; Wu, W. -F.; Shieh, J. -M.; Chao, T. -S.; Yeh, W. -K.; Wang, Y. -H. |
| 國立成功大學 |
2019 |
Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications
|
Sung, P.-J.;Chang, Chang C.-Y.;Chen, L.-Y.;Kao, Kao K.-H.;Su, C.-J.;Liao, T.-H.;Fang, C.-C.;Wang, C.-J.;Hong, T.-C.;Jao, C.-Y.;Hsu, Hsu H.-S.;Luo, S.-X.;Wang, Y.-S.;Huang, Huang H.-F.;Li, J.-H.;Huang, Y.-C.;Hsueh, F.-K.;Wu, C.-T.;Huang, Y.-M.;Hou, F.-J.;Luo, G.-L.;Huang, Y.-C.;Shen, Y.-L.;Ma, W.C.-Y.;Huang, K.-P.;Lin, K.-L.;Samukawa, Samukawa S.;Li, Y.;Huang, G.-W.;Lee, Y.-J.;Li, J.-Y.;Wu, Wu W.-F.;Shieh, J.-M.;Chao, T.-S.;Yeh, W.-K.;Wang, Y.-H. |
| 臺大學術典藏 |
2018-09-10T14:57:35Z |
Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates
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Lee, C.-H.; Kuan, C.-H.; CHIEH-HSIUNG KUAN; SAO-JIE CHEN; Chen, S.-T.; Lai, Y.-P.; Chen, H.-M.;Suen, Y.-W.;Chen, S.-J.;Luo, G.-L.;Lai, Y.-P.;Chen, S.-T.;Lee, C.-H.;Kuan, C.-H.; Chen, H.-M.; Suen, Y.-W.; Chen, S.-J.; Luo, G.-L. |
| 臺大學術典藏 |
2018-09-10T09:22:33Z |
Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I on and nearly defect-free channels
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Chang, H.-C.; Chu, C.-L.; Chen, Y.-T.; Tu, W.-H.; Hou, F.J.; Lo, C.H.; Sung, P.-J.; Chen, B.-Y.; Huang, G.-W.; Luo, G.-L.; Liu, C.W.; Hu, C.; Yang, F.-L.; Hsu, S.-H.; CHEE-WEE LIUet al. |
| 臺大學術典藏 |
2018-09-10T09:22:00Z |
Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots
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Suen, Y.-W.; Luo, G.-L.; Lai, Y.-P.; Wang, F.-M.; Chen, S.-T.; CHIEH-HSIUNG KUAN; Chen, H.-M.; Kuan, C.-H. |
| 臺大學術典藏 |
2018-09-10T08:42:51Z |
Nearly defect-free Ge gate-all-around FETs on Si substrates
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Chu, C.-L.; Tu, W.-H.; Fu, Y.-C.; Sung, P.-J.; Chang, H.-C.; Chen, Y.-T.; Cho, L.-Y.; Hsu, W.; Luo, G.-L.; Liu, C.W.; Hu, C.; Yang, F.-L.; Hsu, S.-H.; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2018-09-10T08:42:51Z |
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
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Tang, S.-H.;Chang, E.Y.;Hudait, M.;Maa, J.-S.;Liu, C.-W.;Luo, G.-L.;Trinh, H.-D.;Su, Y.-H.; Tang, S.-H.; Chang, E.Y.; Hudait, M.; Maa, J.-S.; Liu, C.-W.; Luo, G.-L.; Trinh, H.-D.; Su, Y.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T08:15:14Z |
Competitiveness between direct and indirect radiative transitions of Ge
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Cheng, T.-H.;Ko, C.-Y.;Chen, C.-Y.;Peng, K.-L.;Luo, G.-L.;Liu, C.W.;Tseng, H.-H.; Cheng, T.-H.; Ko, C.-Y.; Chen, C.-Y.; Peng, K.-L.; Luo, G.-L.; Liu, C.W.; Tseng, H.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T08:15:12Z |
High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response
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Hsu, W.; Chen, Y.-T.; Lan, H.-S.; Lee, C.-H.; Chang, H.-C.; Lee, H.-Y.; Luo, G.-L.; Chien, C.-H.; Liu, C.W.; Hu, C.; Yang, F.-L.; Fu, Y.-C.; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage
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Huang, S.-C.; Chung, C.-T.; Heh, D.; Chien, C.-H.; Cheng, C.-C.; Lee, Y.-J.; Wu, W.-F.; Hsu, C.-C.; Kuo, M.-L.; Yao, J.-Y.; Chang, M.-N.; Liu, C.-W.; Hu, C.; Chang, C.-Y.; Yang, F.-L.; Luo, G.-L.; CHEE-WEE LIU et al. |
| 國立交通大學 |
2018-08-21T05:56:59Z |
Ge Nanowire FETs with HfZrOx Ferroelectric Gate Stack Exhibiting SS of Sub-60 mV/dec and Biasing Effects on Ferroelectric Reliability
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Su, C. -J.; Hong, T. -C.; Tsou, Y. -C.; Hou, F. -J.; Sung, P. -J.; Yeh, M. -S.; Wan, C. -C.; Kao, K. -H.; Tang, Y. -T.; Chiu, C. -H.; Wang, C. -J.; Chung, S. -T.; You, T. -Y.; Huang, Y. -C.; Wu, C. -T.; Lin, K. -L.; Luo, G. -L.; Huang, K. -P.; Lee, Y. -J.; Chao, T. -S.; Wu, W. -F.; Huang, G. -W.; Shieh, J. -M.; Yeh, W. -K.; Wang, Y. -H. |
| 國立交通大學 |
2018-08-21T05:56:34Z |
Full Low Temperature Microwave Processed Ge CMOS Achieving Diffusion-Less Junction and Ultrathin 7.5nm Ni Mono-Germanide
|
Lee, Y. -J.; Chuang, S. -S.; Liu, C. -I.; Hsueh, F. -K.; Sung, P. -J.; Chen, H. -C.; Wu, C. -T.; Lin, K. -L.; Yao, J. -Y.; Shen, Y. -L.; Kuo, M. -L.; Yang, C. -H.; Luo, G. -L.; Chen, H. -W.; Lai, C. -H.; Current, M. I.; Wu, C. -Y.; Wan, Y. -M.; Tseng, T. -Y.; Hu, Chenming; Yang, F. -L. |
| 國立成功大學 |
2017 |
Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION
|
Su, C.-J.;Tang, Y.-T.;Tsou, Y.-C.;Sung, P.-J.;Hou, F.-J.;Wang, C.-J.;Chung, S.-T.;Hsieh, C.-Y.;Yeh, Yeh Y.-S.;Hsueh, F.-K.;Kao, Kao K.-H.;Chuang, S.-S.;Wu, C.-T.;You, T.-Y.;Jian, Y.-L.;Chou, T.-H.;Shen, Y.-L.;Chen, B.-Y.;Luo, G.-L.;Hong, T.-C.;Huang, K.-P.;Chen, M.-C.;Lee, Y.-J.;Chao, T.-S.;Tseng, Tseng T.-Y.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2017 |
A procedural for preliminarily determining the maximum injection pressure of CO2 sequestration
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Lee, D.-H.;Liao, C.-J.;Wu, J.-H.;Huang, Y.-F.;Luo, G.-L. |
| 國立交通大學 |
2016-03-28T00:04:19Z |
Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal (vol 107, 113503, 2015)
|
Hsu, C. C.; Chou, C. H.; Wang, S. Y.; Chi, W. C.; Chien, C. H.; Luo, G. L. |
| 國立交通大學 |
2015-12-02T02:59:30Z |
Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal
|
Hsu, C. C.; Chou, C. H.; Wang, S. Y.; Chi, W. C.; Chien, C. H.; Luo, G. L. |
| 國立交通大學 |
2014-12-08T15:15:48Z |
Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate
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Hsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Chen, S. H.; Biswas, Dhrubes; Wang, S. Y.; Chang, C. Y. |
| 國立交通大學 |
2014-12-08T15:14:40Z |
Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate
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Hsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Pilkuhn, M. H.; Tang, S. S.; Chang, C. Y.; Yang, J. Y.; Chung, H. W. |
Showing items 1-25 of 27 (2 Page(s) Totally)
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