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Showing items 26-28 of 28 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:14:40Z |
Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate
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Hsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Pilkuhn, M. H.; Tang, S. S.; Chang, C. Y.; Yang, J. Y.; Chung, H. W. |
| 國立交通大學 |
2014-12-08T15:10:40Z |
Growth and characterization of Ge nanostructures selectively grown on patterned Si
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Cheng, M. H.; Ni, W. X.; Luo, G. L.; Huang, S. C.; Chang, J. J.; Lee, C. Y. |
| 國立臺灣大學 |
2000-10 |
Formation and resettlement of (AuxNi1-x)Sn4 in solder joints of ball-grid-array packages with the Au/Ni surface finish
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Ho, C. E.; Zheng, R.; Luo, G. L.; Lin, A. H.; Kao, and C. R. |
Showing items 26-28 of 28 (2 Page(s) Totally)
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