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Showing items 1-10 of 10 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:52Z |
Growth of high-quality Ge epitaxial layers on Si(100)
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Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA |
| 國立交通大學 |
2014-12-08T15:40:46Z |
Flower-like distributed self-organized Ge dots on patterned Si (001) substrates
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Lee, HM; Yang, TH; Luo, GL; Chang, EY |
| 國立交通大學 |
2014-12-08T15:40:23Z |
Study of nickel silicide contact on Si/Si1-xGex
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Yang, TH; Luo, GL; Chang, EY; Yang, TY; Tseng, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:39:36Z |
Controlled placement of self-organized Ge dots on patterned Si (001) surfaces
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Lee, HM; Yang, TH; Luo, GL; Chang, EY |
| 國立交通大學 |
2014-12-08T15:38:57Z |
Growth of ZnSe epilayer on Si using Ge/GexSi1-x buffer structure
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Yang, TH; Yang, CS; Luo, GL; Chou, WC; Yang, TY; Chang, EY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates
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Yang, TH; Luo, GL; Chang, EY; Hsieh, YC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:36:42Z |
A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate
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Chang, EY; Yang, TH; Luo, GL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:25:54Z |
Growth of high-quality GaAs epitaxial layers on Si substrite by using a novel GeSi buffer strucuture
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Chang, EY; Luo, GL; Yang, TH |
| 國立交通大學 |
2014-12-08T15:17:04Z |
Optical characterization of ZnSe epilayers and ZnCdSe/ZnSe quantum wells grown on Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si virtual substrates
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Ku, JT; Kuo, MC; Shen, JL; Chiu, KC; Yang, TH; Luo, GL; Chang, CY; Lin, YC; Fu, CP; Chuu, DS; Chia, CH; Chou, WC |
| 國立交通大學 |
2014-12-08T15:17:04Z |
Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application
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Hsieh, YC; Chang, EY; Yeh, SS; Chang, CW; Luo, GL; Chang, CY; Lee, CT |
Showing items 1-10 of 10 (1 Page(s) Totally)
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