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| 臺大學術典藏 |
2021-04-21T23:30:01Z |
Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation
|
Chuang, Yen; Liu, Chia You; Kao, Hsiang Shun; Tien, Kai Ying; Luo, Guang Li; JIUN-YUN LI |
| 臺大學術典藏 |
2021-01-19T12:08:35Z |
Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain
|
Chuang, Yen; Liu, Chia You; Luo, Guang Li; JIUN-YUN LI |
| 國立交通大學 |
2019-08-02T02:18:35Z |
Improving Interface State Density and Thermal Stability of High-kappa Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5
|
Lee, Wei-Li; Yu, Cheng-Yu; Zhang, Jun-Lin; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-03T06:47:55Z |
Nearly Dislocation-free Ge/Si Heterostructures by Using Nanoscale Epitaxial Growth Method
|
Luo, Guang-Li; Ko, Chih-Hsin; Wann, Clement H.; Chung, Cheng-Ting; Han, Zong-You; Cheng, Chao-Ching; Chang, Chun-Yen; Lin, Hau-Yu; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-03T06:44:37Z |
Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
|
Lin, Yu-Hsien; Tsai, Yi-He; Hsu, Chung-Chun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-03T06:43:30Z |
Ge/IIIV fin field-effect transistor common gate process and numerical simulations
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Chen, Bo-Yuan; Chen, Jiann-Lin; Chu, Chun-Lin; Luo, Guang-Li; Lee, Shyong; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:00:50Z |
Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
|
Hsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Tsai, Ming-Li; Wang, Shin-Yuan; Chou, Chen-Han; Zhang, Jun Lin; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-02T06:00:11Z |
Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate Dielectric
|
Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen |
| 國立交通大學 |
2018-08-21T05:54:30Z |
Fully Depleted GeOI-Channel Junctionless pMOSFET with a Low-Resistance-Raised NiGe Alloy S/D
|
Lee, Wei-Li; Hsu, Chung-Chun; Chung, Cheng-Ting; Lu, Yu-Hung; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2018-08-21T05:53:26Z |
Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing
|
Hsu, Chung-Chun; Lin, Kun-Lin; Chi, Wei-Chun; Chou, Chen-Han; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Study of High-Ge-Content Si0.16Ge0.84 Gate Stack by Low Pressure Oxidation
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Lee, Wei-Li; Zhang, Jun-Lin; Tsai, Ming-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:56:35Z |
Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs
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Hsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Chou, Chen-Han; Chen, Che-Wei; Chien, Hung-Pin; Chuang, Shang-Shiun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:49:53Z |
III-V MOSFETs with a New Self-Aligned Contact
|
Zhang, Xingui; Guo, Huaxin; Ko, Chih-Hsin; Wann, Clement H.; Cheng, Chao-Ching; Lin, Hau-Yu; Chin, Hock-Chun; Gong, Xiao; Lim, Phyllis Shi Ya; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Yeo, Yee-Chia |
| 國立交通大學 |
2017-04-21T06:49:40Z |
A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage
|
Luo, Guang-Li; Huang, Shih-Chiang; Chung, Cheng-Ting; Heh, Dawei; Chien, Chao-Hsin; Cheng, Chao-Ching; Lee, Yao-Jen; Wu, Wen-Fa; Hsu, Chiung-Chih; Kuo, Mei-Ling; Yao, Jay-Yi; Chang, Mao-Nan; Liu, Chee-Wee; Hu, Chenming; Chang, Chun-Yen; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Reliability Study of MANOS with and without a SiO2 Buffer Layer and BE-MANOS Charge-Trapping NAND Flash Devices
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Liao, Chien-Wei; Lai, Sheng-Chih; Lue, Hang-Ting; Yang, Ming-Jui; Shen, Chin-Yen; Lue, Yi-Hsien; Huang, Yu-Fong; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:56Z |
An oxide-buffered BE-MANOS charge-trapping device and the role of Al2O3
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Huang, Yu-Fong; Yang, Ming-Jui; Lue, Yi-Hsien; Wu, Tai-Bor; Hsieh, Jung-Yu; Wang, Szu-Yu; Hong, Shih-Ping; Hsu, Fang-Hao; Shen, Chih-Yen; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuan-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:54Z |
Highly reliable MA BE-SONOS (Metal-Al2O3 bandgap engineered SONOS) using a SiO2 buffer layer
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Wu, Tai-Bor; Yang, Ming-Jui; Lue, Yi-Hsien; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:50Z |
Integration of Hetero-Structure Body-Tied Ge FinFET Using Retrograde-Well Implantation
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Chou, Yu-Che; Hsu, Chung-Chun; Chun, Cheng-Ting; Chou, Chen-Han; Tsai, Ming-Li; Tsai, Yi-He; Lee, Wei-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:48:46Z |
Suspended Ge Gate-All-Around Nanowire nFETs with Junction Isolation on Bulk Si
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Wan, Chia-Chen; Luo, Guang-Li; Hsu, Shu-Han; Hung, Kuo-Dong; Chu, Chun-Lin; Hou, Tuo-Hung; Su, Chun-Jun; Chen, Szu-Hung; Wu, Wen-Fa; Yeh, Wen-Kuan |
| 國立交通大學 |
2016-03-28T00:04:17Z |
High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process
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Hsu, Chung-Chun; Tsai, Yi-He; Chen, Che-Wei; Li, Jyun-Han; Lin, Yu-Hsien; Lee, Yao-Jen; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2014-12-12T02:45:00Z |
高介電材料於鍺基板及異質磊晶鍺元件於矽平台之研究
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鍾政庭; Chung, Cheng-Ting; 簡昭欣; 羅廣禮; Chien, Chao-Hsin; Luo, Guang-Li |
| 國立交通大學 |
2014-12-12T02:44:20Z |
非平面型三閘極鍺金氧半場效電晶體整合於矽平台
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陳哲偉; Chen, Che-Wei; 簡昭欣; 羅廣禮; Chien, Chao-Hsin; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:45:36Z |
Electrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substrates
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Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Chang, Ching-Chih; Kei, Chi-Chung; Yang, Chun-Hui; Hsiao, Chien-Nan; Perng, Tsong-Pyng; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:36:59Z |
High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain
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Chen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:36:33Z |
Effect of Low Temperature Ge Seed Layer and Post Thermal Annealing on Quality of Ge1-xSix (0.05 <= x <= 0.1) Graded Buffer Layers by UHV-CVD
|
Chi-Lang Nguyen; Nguyen Hong Quan; Binh-Tinh Tran; Su, Yung-Hsuan; Tang, Shih-Hsuan; Luo, Guang-Li; Chang, Edward-Yi |
| 國立交通大學 |
2014-12-08T15:35:59Z |
Experimental Demonstration of (111)-Oriented GaAs Metal-Oxide-Semiconductor Field-Effect-Transistors with Hetero-Epitaxial Ge Source/Drain
|
Han, Tsung-Yu; Luo, Guang-Li; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Kei, Chi-Chung; Hsiao, Chien-Nan; Chien, Chao-Hsin |
| 國立交通大學 |
2014-12-08T15:33:55Z |
Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation
|
Chen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li; Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:33:55Z |
Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel
|
Chen, Che-Wei; Chung, Cheng-Ting; Tzeng, Ju-Yuan; Chang, Pang-Sheng; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2014-12-08T15:30:46Z |
First Experimental Ge CMOS FinFETs Directly on SOI Substrate
|
Chung, Cheng-Ting; Chen, Che-Wei; Lin, Jyun-Chih; Wu, Che-Chen; Chien, Chao-Hsin; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:30:35Z |
Epitaxial Germanium on SOI Substrate and Its Application of Fabricating High I-ON/I-OFF Ratio Ge FinFETs
|
Chung, Cheng-Ting; Chen, Che-Wei; Lin, Jyun-Chih; Wu, Che-Chen; Chien, Chao-Hsin; Luo, Guang-Li; Kei, Chi-Chung; Hsiao, Chien-Nan |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
|
Tang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) p(+)/n and n(+)/p Heterojunctions Formed on Si Substrate
|
Chen, Che-Wei; Chung, Cheng-Ting; Tzeng, Ju-Yuan; Li, Pin-Hui; Chang, Pang-Sheng; Chien, Chao-Hsin; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:29:33Z |
High On/Off Ratio and Very Low Leakage in p(+)/n and n(+)/p Germanium/Silicon Heterojunction Diodes
|
Chen, Che-Wei; Chung, Cheng-Ting; Lin, Jyun-Chih; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Body-Tied Germanium FinFETs Directly on a Silicon Substrate
|
Chen, Che-Wei; Chung, Cheng-Ting; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2014-12-08T15:28:03Z |
C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
|
Tang, Shih Hsuan; Kuo, Chien I.; Hai Dang Trinh; Hudait, Mantu; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Hong Quan Nguyen |
| 國立交通大學 |
2014-12-08T15:16:12Z |
Thermochemical reaction of ZrOx(N-y) interfaces on Ge and Si substrates
|
Cheng, Chao-Ching; Chien, Chao-Hsin; Lin, Je-Hung; Chang, Chun-Yen; Luo, Guang-Li; Yang, Chun-Hui; Hsu, Shih-Lu |
| 國立交通大學 |
2014-12-08T15:15:03Z |
Study of thermal stability of HfOxNy/Ge capacitors using postdeposition annealing and NH3 plasma pretreatment
|
Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Kuo, Mei-Ling; Lin, Je-Hung; Tseng, Chih-Kuo; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:14:57Z |
Ultrathin Si capping layer suppresses charge trapping in HfOxNy/Ge metal-insulator-semiconductor capacitors
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Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Kuo, Mei-Ling; Lin, Je-Hung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:14:16Z |
High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrate
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Luo, Guang-Li; Hsieh, Yen-Chang; Chang, Edward Yi; Pilkuhn, M. H.; Chien, Chao-Hsin; Yang, Tsung-Hsi; Cheng, Chao-Ching; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:13:18Z |
High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric
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Yang, Ming-Jui; Chien, Chao-Hsin; Lu, Yi-Hsien; Luo, Guang-Li; Chiu, Su-Ching; Lou, Chun-Che; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:12:50Z |
Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substrates
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Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Kei, Chi-Chung; Liu, Da-Ren; Hsiao, Chien-Nan; Yang, Chun-Hui; Changa, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:12:50Z |
Improved electrical properties of Gd2O3/GaAs capacitor with modified wet-chemical clean and sulfidization procedures
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Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Tseng, Chih-Kuo; Chiang, Hsin-Che; Yang, Chun-Hui; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:12:24Z |
Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrate
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Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Chang, Ching-Chih; Chang, Chun-Yen; Kei, Chi-Chung; Hsiao, Chien-Nan; Perng, Tsong-Pyng |
| 國立交通大學 |
2014-12-08T15:11:44Z |
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
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Tang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan |
| 國立交通大學 |
2014-12-08T15:11:35Z |
Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
|
Zhang, Xingui; Guo, Huaxin; Lin, Hau-Yu; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Chin, Hock-Chun; Gong, Xiao; Koh, Shao-Ming; Lim, Phyllis Shi Ya; Yeo, Yee-Chia |
| 國立交通大學 |
2014-12-08T15:10:26Z |
Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor
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Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Chen, Yi-Cheng; Chang, Yao-Feng; Wang, Shin-Yuan; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:10:19Z |
The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale Trenches
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Luo, Guang-Li; Huang, Shih-Chiang; Ko, Chih-Hsin; Wann, Clement H.; Chung, Cheng-Ting; Han, Zong-You; Cheng, Chao-Ching; Chang, Chun-Yen; Lin, Hau-Yu; Chien, Chao-Hsin |
| 國立交通大學 |
2014-12-08T15:09:31Z |
Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations
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Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Ling, Yu-Ting; Chang, Ruey-Dar; Kei, Chi-Chung; Hsiao, Chien-Nan; Liu, Jun-Cheng; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:09:00Z |
Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate Dielectric
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Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:07:51Z |
Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
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Luo, Guang-Li; Han, Zong-You; Chien, Chao-Hsin; Ko, Chih-Hsin; Wann, Clement H.; Lin, Hau-Yu; Shen, Yi-Ling; Chung, Cheng-Ting; Huang, Shih-Chiang; Cheng, Chao-Ching; Changb, Chun-Yen |
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